{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,4]],"date-time":"2025-11-04T19:06:51Z","timestamp":1762283211965,"version":"build-2065373602"},"reference-count":31,"publisher":"Wiley","issue":"11","license":[{"start":{"date-parts":[[2025,9,8]],"date-time":"2025-09-08T00:00:00Z","timestamp":1757289600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/linproxy.fan.workers.dev:443\/http\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["434434223 \u2010 SFB 1461"],"award-info":[{"award-number":["434434223 \u2010 SFB 1461"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002347","name":"Bundesministerium f\u00fcr Bildung und Forschung","doi-asserted-by":"publisher","award":["16MEE0299"],"award-info":[{"award-number":["16MEE0299"]}],"id":[{"id":"10.13039\/501100002347","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Circuit Theory &amp; Apps"],"published-print":{"date-parts":[[2025,11]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>The transition from idealized memristor models to physical implementations, such as resistive random access memory (RRAM) devices, is pivotal for advancing neuromorphic circuits in hardware. However, real\u2010world RRAM devices face challenges due to inherent variability and fabrication tolerances, which hinder their adoption. This study presents the variability intensity model (VIM), a statistical framework designed to assess variability in RRAM devices. The VIM is employed to evaluate the resilience of a memristor\u2010based Hindmarsh\u2013Rose circuit, which models neuronal behavior in biological systems. The results indicate that the circuit exhibits heightened sensitivity to variability in high\u2010conductance states, while demonstrating increased tolerance in low\u2010conductance states. This observation is consistent with RRAM characteristics, where conductance variability decreases as conductance increases. Furthermore, robust spiking dynamics are observed, though the bursting behavior remains sensitive, leading to critical parameter constraints for RRAM devices. By employing a variability model based on real\u2010world measurements, this work establishes a crucial foundation for the implementation of memristor\u2010based Hindmarsh\u2013Rose circuits in hardware, where variability is a paramount consideration.<\/jats:p>","DOI":"10.1002\/cta.70126","type":"journal-article","created":{"date-parts":[[2025,9,8]],"date-time":"2025-09-08T09:21:34Z","timestamp":1757323294000},"page":"6712-6720","update-policy":"https:\/\/linproxy.fan.workers.dev:443\/https\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Towards a Memristor\u2010Based Circuit Implementation of the Hindmarsh\u2013Rose Model"],"prefix":"10.1002","volume":"53","author":[{"ORCID":"https:\/\/linproxy.fan.workers.dev:443\/https\/orcid.org\/0000-0001-9700-9295","authenticated-orcid":false,"given":"Sebastian","family":"Jenderny","sequence":"first","affiliation":[{"name":"Chair of Digital Communication Systems Ruhr University Bochum  Bochum Germany"}]},{"ORCID":"https:\/\/linproxy.fan.workers.dev:443\/https\/orcid.org\/0000-0003-0212-259X","authenticated-orcid":false,"given":"Daniel","family":"Reiser","sequence":"additional","affiliation":[{"name":"Chair of Integrated Systems University of Rostock  Rostock Germany"}]},{"ORCID":"https:\/\/linproxy.fan.workers.dev:443\/https\/orcid.org\/0000-0002-1484-6125","authenticated-orcid":false,"given":"Karlheinz","family":"Ochs","sequence":"additional","affiliation":[{"name":"Chair of Digital Communication Systems Ruhr University Bochum  Bochum Germany"}]},{"ORCID":"https:\/\/linproxy.fan.workers.dev:443\/https\/orcid.org\/0000-0002-9687-6247","authenticated-orcid":false,"given":"Marc","family":"Reichenbach","sequence":"additional","affiliation":[{"name":"Chair of Integrated Systems University of Rostock  Rostock Germany"}]}],"member":"311","published-online":{"date-parts":[[2025,9,8]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1098\/rspb.1984.0024"},{"issue":"1","key":"e_1_2_9_3_1","first-page":"91","article-title":"An Efficient and Reconfigurable Synchronous Neuron Model","volume":"65","author":"Soleimani H.","year":"2018","journal-title":"IEEE Transactions on Circuits and Systems II: Express Briefs"},{"issue":"3","key":"e_1_2_9_4_1","first-page":"1737","article-title":"Synchronization of Coupled Hindmarsh\u2013Rose Neuronal Dynamics: Analysis and Experiments","volume":"69","author":"Joshi S. K.","year":"2022","journal-title":"IEEE Transactions on Circuits and Systems II: Express Briefs"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2015.2505258"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1007\/s11071-021-06453-9"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2022.3164068"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1002\/cta.3113"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1140\/epjb\/s10051\u2010023\u201000578\u2010z"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1186\/s11671\u2010020\u201003299\u20109"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.biosystems.2019.01.005"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1007\/s11071\u2010022\u201007850\u20104"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.3389\/fphy.2023.1160419"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.chaos.2024.115150"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1088\/1402\u20104896\/ad3eec"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.chaos.2024.115574"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1002\/jnm.2588"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4927332"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1142\/S0218127415300190"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1986.13458"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2023.3328821"},{"key":"e_1_2_9_22_1","doi-asserted-by":"crossref","unstructured":"K.OchsandE.Solan \u201cSensitivity Analysis of Memristors Based on Emulation Techniques \u201d in2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS) (2016):1\u20134.","DOI":"10.1109\/MWSCAS.2016.7869981"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1186\/S11671\u2010017\u20102419\u20108"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.3390\/nano11051261"},{"key":"e_1_2_9_25_1","doi-asserted-by":"crossref","unstructured":"A.Glukhov D.Bridarolli S.Ricci et\u00a0al. \u201cCompact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences \u201d in2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)(IEEE 2023):793\u2013797 https:\/\/linproxy.fan.workers.dev:443\/https\/doi.org\/10.1109\/NMDC57951.2023.10343984.","DOI":"10.1109\/NMDC57951.2023.10343984"},{"key":"e_1_2_9_26_1","doi-asserted-by":"crossref","unstructured":"D.Reiser M.Reichenbach T.Rizzi et\u00a0al. \u201cTechnology\u2010Aware Drift Resilience Analysis of RRAM Crossbar Array Configurations \u201d in2023 21st IEEE Interregional Newcas Conference (NEWCAS)(IEEE 2023):1\u20135 https:\/\/linproxy.fan.workers.dev:443\/https\/doi.org\/10.1109\/NEWCAS57931.2023.10198076.","DOI":"10.1109\/NEWCAS57931.2023.10198076"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2210856"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2015.2433536"},{"volume-title":"Preferred Number Series for Resistors and Capacitors","year":"2015","author":"International Electrotechnical Commission","key":"e_1_2_9_29_1"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2918102"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2020.3004666"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2330200"}],"container-title":["International Journal of Circuit Theory and Applications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/linproxy.fan.workers.dev:443\/https\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/cta.70126","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,11,4]],"date-time":"2025-11-04T18:59:38Z","timestamp":1762282778000},"score":1,"resource":{"primary":{"URL":"https:\/\/linproxy.fan.workers.dev:443\/https\/onlinelibrary.wiley.com\/doi\/10.1002\/cta.70126"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,9,8]]},"references-count":31,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2025,11]]}},"alternative-id":["10.1002\/cta.70126"],"URL":"https:\/\/linproxy.fan.workers.dev:443\/https\/doi.org\/10.1002\/cta.70126","archive":["Portico"],"relation":{},"ISSN":["0098-9886","1097-007X"],"issn-type":[{"type":"print","value":"0098-9886"},{"type":"electronic","value":"1097-007X"}],"subject":[],"published":{"date-parts":[[2025,9,8]]},"assertion":[{"value":"2025-03-19","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-08-16","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-09-08","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}