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Electron."],"published-print":{"date-parts":[[2014]]},"DOI":"10.1587\/transele.e97.c.1048","type":"journal-article","created":{"date-parts":[[2014,11,1]],"date-time":"2014-11-01T00:00:31Z","timestamp":1414800031000},"page":"1048-1054","source":"Crossref","is-referenced-by-count":6,"title":["Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors for System-on-Glass"],"prefix":"10.1587","volume":"E97.C","author":[{"given":"Akito","family":"HARA","sequence":"first","affiliation":[{"name":"Tohoku Gakuin University"}]},{"given":"Shinya","family":"KAMO","sequence":"additional","affiliation":[{"name":"Tohoku Gakuin University"}]},{"given":"Tadashi","family":"SATO","sequence":"additional","affiliation":[{"name":"Hiroshima University"}]}],"member":"532","reference":[{"key":"1","unstructured":"[1] A. O. Adan, S. Ono, H. Shibayama, and R. Miyake, “Analysis of submicron double-gated polysilicon MOS thin film transistors,” Tech. 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