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ORCIDJunghyup Lee
- > Home > Persons > Junghyup Lee
Publications
- 2024
[c31]Jeongyoon Wie
, Sangwoo Jung, Taeryoung Seol, Geunha Kim, Sehwan Lee, Homin Jang, Samhwan Kim, Yeonjae Shin, Jae Eun Jang, Jaeha Kung, Arup K. George, Junghyup Lee:
A 3.3-to-11V-Supply-Range 10μW/Ch Arbitrary-Waveform-Capable Neural Stimulator with Output-Adaptive-Self-Bias and Supply-Tracking Schemes in 0.18μm Standard CMOS. CICC 2024: 1-2- [c27]Taeryoung Seol, Geunha Kim, Sehwan Lee, Samhwan Kim, Dongwook Kim, Jeongyoon Wie, Yeonjae Shin, Hongki Kang, Jae Eun Jang, Arup K. George, Junghyup Lee:
33.11 A Hybrid Recording System with 10kHz-BW 630mVPP 84.6dB-SNDR 173.3dB-FOMSNDR and 5kHz-BW 114dB-DR for Simultaneous ExG and Biocurrent Acquisition. ISSCC 2024: 562-564 - [c26]Sehwan Lee, Taeryoung Seol, Geunha Kim, Minyoung Song, Gain Kim, Jong-Hyeok Yoon, Arup K. George, Junghyup Lee:
A 97dB-PSRR 178.4dB-FOMDR Calibration-Free VCO-ΔΣ ADC Using a PVT-Insensitive Frequency-Locked Differential Regulation Scheme for Multi-Channel ExG Acquisition. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c23]Taeryoung Seol, Sehwan Lee, Geunha Kim, Samhwan Kim, Euiseong Kim, Seungyeob Baik, Jaeha Kung, Ji-Woong Choi, Arup K. George, Junghyup Lee:
A 1V 136.6dB-DR 4kHz-BW $\Delta\Sigma$ Current-to-Digital Converter with a Truncation-Noise-Shaped Baseline-Servo-Loop in 0.18\mu\mathrm{m}$ CMOS. ISSCC 2023: 482-483 - [c22]Geunha Kim, Sehwan Lee, Taeryoung Seol, Seungyeob Baik, Yeonjae Shin, Gain Kim, Jong-Hyeok Yoon, Arup K. George, Junghyup Lee:
A 1V-Supply $1.85\mathrm{V}_{\text{PP}}$ -Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR 2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS. ISSCC 2023: 484-485 - 2022
- [j7]Arup K. George, Wooyoon Shim, Jaeha Kung, Ji-Hoon Kim, Minkyu Je, Junghyup Lee:
A 46-nF/10-MΩ Range 114-aF/0.37-Ω Resolution Parasitic- and Temperature-Insensitive Reconfigurable RC-to-Digital Converter in 0.18-μm CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. 69(3): 1171-1184 (2022) - [c19]Sehwan Lee, Yoonsung Choi, Geunha Kim, Seungyeob Baik, Taeryoung Seol, Homin Jang, Doyoung Lee, Minkyu Je, Ji-Woong Choi, Arup K. George, Junghyup Lee:
A 0.7V 17fJ/Step-FOMW 178.1dB-FOMSNDR 10kHz-BW 560mVPP True-ExG Biopotential Acquisition System with Parasitic-Insensitive 421MΩ Input Impedance in 0.18μm CMOS. ISSCC 2022: 336-338 - [c17]Seungyeob Baik, Taeryoung Seol, Sehwan Lee, Geunha Kim, SeongHwan Cho, Arup K. George, Junghyup Lee:
A 2.54μJ∙ppm2-FOMS Supply- and Temperature-Independent Time-Locked ΔΣ Capacitance-to-Digital Converter in 0.18-μm CMOS. VLSI Technology and Circuits 2022: 114-115 - 2020
- [j4]Soonyoung Hong, Arup K. George, Donggu Im, Minkyu Je, Junghyup Lee:
A 1.0 V, 5.4 pJ/bit GFSK Demodulator Based on an Injection Locked Ring Oscillator for Low-IF Receivers. IEEE Access 8: 185209-185217 (2020) - [j3]Junghyup Lee, Arup K. George, Minkyu Je:
An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-μm CMOS. IEEE J. Solid State Circuits 55(9): 2489-2497 (2020) - 2018
- [c9]Junghyup Lee, Arup K. George, Minkyu Je:
An ultra-low-noise differential relaxation oscillator based on a swing-boosting scheme. ASP-DAC 2018: 277-278 - [c7]Sehwan Lee, Arup K. George, Taeju Lee, Jun-Uk Chu, Sungmin Han, Ji-Hoon Kim, Minkyu Je, Junghyup Lee:
A 110dB-CMRR 100dB-PSRR multi-channel neural-recording amplifier system using differentially regulated rejection ratio enhancement in 0.18μm CMOS. ISSCC 2018: 472-474 - [c6]Arup K. George, Wooyoon Shim, Minkyu Je, Junghyup Lee:
A 114-AF RMS- Resolution 46-NF/10-MΩ -Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing. VLSI Circuits 2018: 157-158 - 2017
- [c4]Seungyeob Baik, Arup K. George, Minkyu Je, Junghyup Lee:
A 1 V 2.5 μW fully-differential ASK demodulator with 12.5 pJ/bit FOM for ultra-low power biomedical applications. MWSCAS 2017: 313-316 - 2016
- [c3]Junghyup Lee, Arup K. George, Minkyu Je:
5.10 A 1.4V 10.5MHz swing-boosted differential relaxation oscillator with 162.1dBc/Hz FOM and 9.86psrms period jitter in 0.18µm CMOS. ISSCC 2016: 106-108
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