Exploring XOR-based Full Adders and decoupling cells to variability mitigation at FinFET technology.

Fábio G. R. G. da Silva Fabio G. Rossato G. da Silva

Fábio G. R. G. da Silva Rafael N. M. Oliveira Alexandra L. Zimpeck Cristina Meinhardt Ricardo Reis 0001 Exploring XOR-based Full Adders and decoupling cells to variability mitigation at FinFET technology. 137-146 2022 87 Integr. https://doi.org/10.1016/j.vlsi.2022.06.008 db/journals/integration/integration87.html#SilvaOZMR22

Rafael N. M. Oliveira Fábio G. R. G. da Silva Ricardo Reis 0001 Rafael B. Schvittz Cristina Meinhardt Improving Soft Error Robustness of Full Adder Circuits with Decoupling Cell and Transistor Sizing. 1-6 2022 SBCCI https://doi.org/10.1109/SBCCI55532.2022.9893240 conf/sbcci/2022 db/conf/sbcci/sbcci2022.html#OliveiraSRSM22 Rafael N. M. Oliveira Fábio G. R. G. da Silva Ricardo Reis 0001 Cristina Meinhardt SET Mitigation Techniques on Mirror Full Adder at 7 nm FinFET Technology. 1-2 2021 LATS https://doi.org/10.1109/LATS53581.2021.9651889 conf/latw/2021 db/conf/latw/lats2021.html#OliveiraSRM21 Rafael N. M. Oliveira Fábio G. R. G. da Silva Ricardo Reis 0001 Cristina Meinhardt Mirror Full Adder SET Susceptibility on 7nm FinFET Technology. 1-4 2020 ICECS https://doi.org/10.1109/ICECS49266.2020.9294891 conf/icecsys/2020 db/conf/icecsys/icecsys2020.html#OliveiraS0M20 Fabio G. Rossato G. da Silva Cristina Meinhardt Ricardo Reis 0001 Mitigation Effects of Decoupling Cells on Full Adders Process Variability. 317-320 2020 MWSCAS https://doi.org/10.1109/MWSCAS48704.2020.9184613 conf/mwscas/2020 db/conf/mwscas/mwscas2020.html#SilvaM020 Fabio G. Rossato G. da Silva Cristina Meinhardt Ricardo Augusto da Luz Reis FinFET Variability and Near-threshold operation: Impact on Full Adders design using XOR Blocks. 638-641 2019 ICECS https://doi.org/10.1109/ICECS46596.2019.8965022 conf/icecsys/2019 db/conf/icecsys/icecsys2019.html#SilvaMR19

Roberto B. Almeida Cleiton Magano Marques Paulo F. Butzen Fábio G. R. G. da Silva Ricardo A. L. Reis Cristina Meinhardt Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. 196-202 2018 88-90 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2018.07.134 https://www.wikidata.org/entity/Q129145078 db/journals/mr/mr88.html#AlmeidaMBSRM18

Fabio G. Rossato G. da Silva Cristina Meinhardt Ricardo Reis 0001 Impact of Near-Threshold and Variability on 7nm FinFET XOR Circuits. 573-576 2018 ICECS https://doi.org/10.1109/ICECS.2018.8618065 conf/icecsys/2018 db/conf/icecsys/icecsys2018.html#SilvaMR18 Fábio G. R. G. da Silva Paulo F. Butzen Cristina Meinhardt PVT variability analysis of FinFET and CMOS XOR circuits at 16nm. 528-531 2016 ICECS https://doi.org/10.1109/ICECS.2016.7841255 conf/icecsys/2016 db/conf/icecsys/icecsys2016.html#SilvaBM16 Roberto B. Almeida Paulo F. Butzen Cleiton Magano Marques Cristina Meinhardt Rafael N. M. Oliveira Ricardo Augusto da Luz ReisRicardo A. L. ReisRicardo Reis 0001 Rafael B. Schvittz Alexandra L. Zimpeck