Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer.

Mon, 01 Jan 2024 00:00:00 +0100

Sijung Yoo, Donghoon Kim , Duk-Hyun Choe, Hyun Jae Lee, Yunseong Lee, Sanghyun Jo, Yoonsang Park, Ki Hong Kim, Kyooho Jung, Moonil Jung, Kwang-Hee Lee, Jee-Eun Yang, Sangwook Kim , Seung-Geol Nam:
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer. VLSI Technology and Circuits 2024: 1-2