"A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate ..."

Ernest Y. Wu, Richard G. Southwick, Baozhen Li (2025)

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DOI: 10.1109/IRPS48204.2025.10983206

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type: Conference or Workshop Paper

metadata version: 2025-06-04

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Ernest Y. Wu, Richard G. Southwick, Baozhen Li:
A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics. IRPS 2025: 1-10

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