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Microelectronics Reliability, Volume 66

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Volume 66, November 2016

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Wu Zhou, Jiangbo He, Xiao-Ping He, Huijun Yu, Bei Peng:
Dielectric charging induced drift in micro device reliability-a review. 1-9
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YanLing Wang, Xiaojin Li, Jian Qing, Yan Zeng, Yanling Shi, Ao Guo, ShaoJian Hu, Shoumian Chen, Yuhang Zhao:
Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models. 10-15
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Michael Knetzger, Elke Meissner, Joff Derluyn, Marianne Germain, Jochen Friedrich:
Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics. 16-21
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Asiri Jayawardena, Nadarajah Narendran:
Analysis of electrical parameters of InGaN-based LED packages with aging. 22-31
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Yang Liu, Changchun Chai, Qingyang Fan, Chunlei Shi, Xiaowen Xi, Xinhai Yu, Yintang Yang:
Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse. 32-37
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Changjun Liao, Jizhi Liu, Zhiwei Liu:
New fast turn-on speed SCR device for electrostatic discharge protection. 38-45
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Wei Liang, Aihua Dong, Hang Li, Meng Miao, Chung-Chen Kuo, Maxim Klebanov, Juin J. Liou:
Characteristics of ESD protection devices operated under elevated temperatures. 46-51
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Yuwei Zhai, Faguo Liang, Chunsheng Guo, Yan Liu:
Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope. 52-57
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Lingling Li, Yahui Xu, Zhigang Li, Pengchong Wang, Bing Wang:
The effect of electro-thermal parameters on IGBT junction temperature with the aging of module. 58-63
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Sihem Bouguezzi, Moez Ayadi, Moez Ghariani:
Developing a Simplified Analytical Thermal Model of Multi-chip Power Module. 64-77
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Daisuke Yamane, Toshifumi Konishi, Teruaki Safu, Hiroshi Toshiyoshi, Masato Sone, Kazuya Masu, Katsuyuki Machida:
Evaluation and modeling of adhesion layer in shock-protection structure for MEMS accelerometer. 78-84
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Abderrahmane Baïri:
Free convective heat transfer coefficient for high powered and tilted QFN64 electronic device. 85-91
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Fan Li, Wenguo Zhang, Li-Lan Gao, Hong Gao:
The coupled effects of salt-spray corrosion, electrical current and mechanical load on the electrical and fatigue properties of COG assembly. 92-97
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J. Thambi, Ulrich A. W. Tetzlaff, Andreas Schiessl, Klaus-Dieter Lang, M. Waltz:
High cycle fatigue behaviour and generalized fatigue model development of lead-free solder alloy based on local stress approach. 98-105
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Bo Huang, Xunbo Li, Zhi Zeng, Nanbo Chen:
Mechanical behavior and fatigue life estimation on fretting wear for micro-rectangular electrical connector. 106-112
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Ah-Young Park, Satish C. Chaparala, Seungbae Park:
Risk assessment of the crack propagation and delamination of the Cu-to-Cu direct bonded (CuDB) interface. 113-121
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Camille Durand, Markus Klingler, Maxence Bigerelle, Daniel Coutellier:
Solder fatigue failures in a new designed power module under Power Cycling. 122-133
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Hongjun Ji, Jiao Wang, Mingyu Li:
Microstructure and reliability of hybrid interconnects by Au stud bump with Sn-0.7Cu solder for flip chip power device packaging. 134-142
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Fei Chong Ng, Aizat Abas, Muhammad Hafifi Hafiz Ishak, Mohd Zulkifly Abdullah, M. S. Abdul Aziz:
Effect of thermocapillary action in the underfill encapsulation of multi-stack ball grid array. 143-160
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Shrikant Swaminathan, Kamal K. Sikka, Richard F. Indyk, Tuhin Sinha:
Measurement of underfill interfacial and bulk fracture toughness in flip-chip packages. 161-172
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Anis Souari, Claude Thibeault, Yves Blaquière, Raoul Velazco:
Towards an efficient SEU effects emulation on SRAM-based FPGAs. 173-182

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