<?xml version="1.0"?>
<dblpperson name="Seokhyang Kim" pid="376/6027" n="1">
<person key="homepages/376/6027" mdate="2024-05-30">
<author pid="376/6027">Seokhyang Kim</author>
</person>
<r><inproceedings key="conf/irps/HwangKKCKJCKPKYSB24" mdate="2024-05-29">
<author pid="376/4925">Soojung Hwang</author>
<author pid="204/2439">Jongkyu Kim</author>
<author pid="42/6887">Juntae Kim</author>
<author pid="376/4846">Dahyun Cha</author>
<author pid="77/2354">Minho Kim</author>
<author pid="322/4623">Dongkyu Jang</author>
<author pid="376/5600">Sunghak Cho</author>
<author pid="376/6027">Seokhyang Kim</author>
<author pid="226/2625">Jaeseong Park</author>
<author pid="60/6316">Hyungjoon Kim</author>
<author pid="376/5536">Sukwon Yu</author>
<author pid="352/7981">Boyoung Song</author>
<author pid="316/3557">Hyodong Ban</author>
<title>Interface Engineering of Trench-Ox for Modern DRAM Devices.</title>
<pages>1-4</pages>
<year>2024</year>
<booktitle>IRPS</booktitle>
<ee>https://doi.org/10.1109/IRPS48228.2024.10529421</ee>
<crossref>conf/irps/2024</crossref>
<url>db/conf/irps/irps2024.html#HwangKKCKJCKPKYSB24</url>
</inproceedings>
</r>
<coauthors n="12" nc="1">
<co c="0"><na f="b/Ban:Hyodong" pid="316/3557">Hyodong Ban</na></co>
<co c="0"><na f="c/Cha:Dahyun" pid="376/4846">Dahyun Cha</na></co>
<co c="0"><na f="c/Cho:Sunghak" pid="376/5600">Sunghak Cho</na></co>
<co c="0"><na f="h/Hwang:Soojung" pid="376/4925">Soojung Hwang</na></co>
<co c="0"><na f="j/Jang:Dongkyu" pid="322/4623">Dongkyu Jang</na></co>
<co c="0"><na f="k/Kim:Hyungjoon" pid="60/6316">Hyungjoon Kim</na></co>
<co c="0"><na f="k/Kim:Jongkyu" pid="204/2439">Jongkyu Kim</na></co>
<co c="0"><na f="k/Kim:Juntae" pid="42/6887">Juntae Kim</na></co>
<co c="0"><na f="k/Kim:Minho" pid="77/2354">Minho Kim</na></co>
<co c="0"><na f="p/Park:Jaeseong" pid="226/2625">Jaeseong Park</na></co>
<co c="0"><na f="s/Song:Boyoung" pid="352/7981">Boyoung Song</na></co>
<co c="0"><na f="y/Yu:Sukwon" pid="376/5536">Sukwon Yu</na></co>
</coauthors>
</dblpperson>

