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2SC2624 NPN Transistor Datasheet

This document provides information on the 2SC2624 silicon NPN power transistor from ISC. It lists the transistor's key specifications including an absolute maximum rating of 400V for collector-emitter voltage, a continuous collector current of 5A, and a junction temperature of 150°C. Application areas for the transistor include switching regulators, ultrasonic generators, and high frequency inverters.

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Evelio Castro Gómez
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81 views2 pages

2SC2624 NPN Transistor Datasheet

This document provides information on the 2SC2624 silicon NPN power transistor from ISC. It lists the transistor's key specifications including an absolute maximum rating of 400V for collector-emitter voltage, a continuous collector current of 5A, and a junction temperature of 150°C. Application areas for the transistor include switching regulators, ultrasonic generators, and high frequency inverters.

Uploaded by

Evelio Castro Gómez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

isc Silicon NPN Power Transistor 2SC2624

DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 450 V

VCEO Collector-Emitter Voltage 400 V

VCEO(SUS) Collector-Emitter Voltage 400 V

VEBO Emitter-Base voltage 7 V

IC Collector Current-Continuous 5 A

IB Base Current-Continuous 1.5 A

Collector Power Dissipation


PC 80 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W

isc website：[Link] 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SC2624

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A ; IB= 0 400 V

V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 450 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V

VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V

ICBO Collector Cutoff Current VCB= 450V ; IE=0 1.0 mA

IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA

hFE DC Current Gain IC= 5A; VCE= 5V 10

Switching times

ton Turn-on Time 1.0 μs

IC= 4A , IB1= -IB2= 0.8A


tstg Storage Time RL= 20Ω;PW=20μs 2.0 μs
Duty Cycle≤2%

tf Fall Time 1.0 μs

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website：[Link] 2 isc & iscsemi is registered trademark

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