Catalogue

Photonic Solutions Ltd Unit 2.2, Quantum Court, Research Avenue South,
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TABLE OF CONTENTS
• Symbols............................................................................................................................................................... 3
• Glossary of Terms................................................................................................................................................ 4
◦ General Definitions........................................................................................................................................ 4
◦ Detector Parameters...................................................................................................................................... 4
◦ Preamplifier Parameters................................................................................................................................ 5
• Application Notes................................................................................................................................................. 6
◦ Thermoelectric Cooling.................................................................................................................................. 6
◦ Thermoelectric Cooler Controllers................................................................................................................. 6
◦ NCP03XM222E05RL Thermistor Characteristic............................................................................................ 7
◦ Optical Immersion.......................................................................................................................................... 8
◦ Preamplifiers for IR Detectors........................................................................................................................ 9
◦ IR Detectors Packages................................................................................................................................ 10
◦ IR Windows.................................................................................................................................................. 10
◦ Applications................................................................................................................................................. 10
◦ Custom Engineering / Design...................................................................................................................... 11
◦ Precautions for Use..................................................................................................................................... 11
• Order Code........................................................................................................................................................ 12
• Infrared Detectors.............................................................................................................................................. 15
◦ Photoconductors.......................................................................................................................................... 17
◦ Photoelectromagnetic Detectors.................................................................................................................. 26
◦ Photovoltaic Detectors................................................................................................................................. 28
• Infrared Detectors Accessories.......................................................................................................................... 42
◦ Preamplifiers................................................................................................................................................ 44
◦ TEC Controllers........................................................................................................................................... 72
◦ Preamplifier Power Supplies........................................................................................................................ 80
◦ Cables......................................................................................................................................................... 86
◦ AC Adaptors................................................................................................................................................. 87
◦ Mechanical Accessories.............................................................................................................................. 87
• Warranty............................................................................................................................................................. 94
• Contact and Distributors..................................................................................................................................... 95
• Appendix............................................................................................................................................................ 96

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 2
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 SYMBOLS

A detector active area tr rise time

Cd detector capacitance tup power-on to LOCK indicator time

D* normalized detectivity w width of the detector

en preamplifier input noise voltage density Vn noise voltage

fo noise measurement frequency Vout output voltage swing

fhi high cut-off frequency Voff output voltage offset

flo low cut-off frequency Vsup power supply voltage

I current VTEC maximum TEC output voltage

Ib bias current Zd detector impedance

Idark dark current λpeak peak wavelength [μm]

Iin total input noise current λopt optimal wavelength [μm]

In noise current λcut-on cut-on wavelength [μm]

in noise current density λcut-off cut-off wavelength [μm]

Isup power supply current τ time constant [ns]

ITEC maximum TEC output current

I' current flowing through detector resistance

IR infrared:

MWIR – Mid-Wavelength Infrared: 2-6 µm

LWIR – Long-Wavelength Infrared: 8-14 µm

k Boltzmann's constant: 1.3806·10-23 J/K

Ki transimpedance

PC photoconductor

PCI photoconductor optically immersed

PCQ quadrant photoconductor

PEM photoelectromagnetic detector

PV photovoltaic detector

PVI photovoltaic optically immersed detector

PVM photovoltaic multiple junction detector

PVMI photovoltaic multiple junction detector optically immersed

PVMQ quadrant photovoltaic multiple junction detector

R detector resistance

Ri current responsivity

RL load resistance

Rout output impedance

Rs series resistance

Rsq sheet resistance

Rv voltage responsivity

Ta ambient temperature

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 3
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 GLOSSARY OF TERMS
General Definitions
Hg1-xCdxTe Detector Formats
Known also as Mercury Cadmium Telluride (MCT), CdHgTe, (Cd,Hg)Te Square and rectangular formats are used for PC, PV, PVM and PEM
or MerCadTel; an alloy of CdTe and HgTe. Change of the CdTe to detectors.
HgTe ratio (composition or x-value) can be used to tune optical Circular shapes for some PV detectors are available upon request.
absorption cut-off wavelength in the wide range from ultraviolet (UV) to
deep infrared (IR). Cooling shifts the cut-off wavelength towards long Photoelectromagnetic Detectors (PEM)
wavelengths. Detectors from VIGO System are based on complex Photovoltaic Detectors based on the Photoelectromagnetic Effect. It
graded gap MCT structures optimized for MWIR (3-6 µm) and LWIR consists in spatial separation of optically generated electrons and
(8-14 µm) ranges. holes in the magnetic field. They do not require electrical bias and
show no flicker noise (1/f).
Photovoltaic Detectors (PV, PVM) The PEM devices are typically used as fast, uncooled detectors of the
Photovoltaic Detectors (photodiodes) are semiconductor structures long wavelength radiation.
with one (PV) or multiple (PVM) homo- or heterojunctions. Absorbed
photons produce electron-hole pairs, resulting in external photocurrent. Photoconductors (PC)
Reverse bias voltage may be applied to increase differential
Photoconductive Detectors based on the Photoconductive Effect.
resistance, reduce the shot noise, improve high frequency
Infrared radiation generates charge carriers in the semiconductor
performance and dynamic range.
active region decreasing its resistance. The resistance change is
Reverse bias may increase responsivity in some devices.
sensed as a voltage change by applying a constant current bias. The
Unfortunately, at the expense of flicker noise (1/f) in most cases.
optimum bias current is specified in the Final Test Report and
Photovoltaic detectors are more vulnerable to electrostatic
depends on the detector size, operating temperature and spectral
discharges than Photoconductors.
characteristics

Detector Parameters
Current and Voltage Responsivity: Ri, Rv Corner Frequency: 1/f
Ri ( λ )=
Current Signal (λ )⋅d λ
Incident Power( λ)⋅d λ [ ]
A
W
Flicker noise or 1/f noise is a frequency dependent noise.
Its power is proportional to
1
b
where b ~ 1.
Current responsivity is typically used for description of PV and PVM f
detectors. Below the corner frequency the noise of detectors is dominated by
flicker noise.
R i ( λ )=
VoltageSignal(λ )⋅d λ
Incident Power( λ)⋅d λ W
V
[ ] Normalized Detectivity: D*
Voltage responsivity is typically used for description of PC and PEM The Signal-to-Noise Ratio (SNR) at a detector output normalized to
detectors. 1 W radiant power, a 1 cm2 detector optical area and a 1 Hz
bandwidth.
Responsivity-Width Product: Ri·w, Rv·w The higher the D* value, the better the detector.
The responsivity of PC, PEM and PVM devices is inversely
proportional to the width w of the detector.
Therefore, the normalized responsivity can be expressed as the
R R
D *= i √ A= v √A
in vn
cm⋅√ Hz
W [ ]
current responsivity-width product (Ri·w) for PVM or voltage
responsivity-width product (Rv·w) for PC and PEM. Optical Area: A
Active Area (Active Element) - the area from which the incident
radiant power is collected.
Dark Current: Idark
For immersed detector it is different from physical detector area (see
The current that flows in a photodetector when it is not receiving any
Optical Immersion chapter).
light. It may increase as the temperature rises.
The small amount of current that flows through a photonic
semiconductor device when it is not operating. Also known as Detector Capacitance: Cd
Leakage Current. Parallel capacitance in the detector structure.

Maximum Bias Current: Imax Spectral Response

The maximum current that can flow through a Photoconductive or Spectral Responsivity or Spectral Detectivity – in detector data sheets
Photovoltaic detector without a risk of its damage. it is presented as Rv(λ), Ri(λ) or D*(λ).
It can be characterized by cut-on, cut-off, optimum and peak
wavelength.
Bias Current-Width Ratio: Ib/w
Width-normalized photoconductor bias current.
Typical Photoconductor's (PC series) bias current Ib should be Peak Wavelength: λpeak
increased proportionally to it's width w. Therefore, the normalized bias λpeak is a wavelength of detector maximum responsivity.
current can be expressed as the Ib/w.
Optimum Wavelength: λopt
Noise Current and Noise Voltage: In, Vn The wavelength a device is optimized for. Typically longer than λpeak.
Root mean square Noise Current or Noise Voltage.
In = I2n (t ) √
V n= U 2n (t ) √ Cut-On Wavelength: λcut-on
λcut-on is the shortest wavelength at which a detector responsivity
reaches 10% of the peak value.
Noise Current and Noise Voltage Density: in, vn
In Vn
in = v n= Cut-Off Wavelength: λcut-off
√Δ f √Δ f λcut-off is the longest wavelength at which a detector responsivity
reaches 50% of the peak value.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 4
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
Glossary of Terms

Resistance – Optical Area Product: R·A Operating Temperature: T

Area-normalized detector resistance. Typical photodiodes (PV) Detector active element temperature.
resistance decreases proportionally to their area increasing. Therefore,
the normalized resistance can be expressed as the R·A. Acceptance Angle: Φ
In contrast, the PVM detectors are characterized by Sheet Acceptance angle is the maximum angle at which incoming radiation
Resistance. can be captured by a detector. Radiation coming from a larger cone
angle won't reach the detector.
Series Resistance: Rs
Parasitic resistance in photodiodes. Its contribution to the total diode Field of View: FOV
resistance may be significant for long wavelength and near room VIGO defines the Field of View as the angle (FOV), which is two times
Operating Temperatures diodes, especially with large Optical Area. the half angle defined by:
• the center of the detector and detector housing - in flat or
Sheet Resistance: Rsq equipped with hemispherical lens detectors,
The normalized resistance expressed in Ω/□. It is used to normalize and
the resistance for different size devices with non-square active area • the marginal ray in detectors with intermediate or
R⋅w hyperhemispherical (standard) lens.
Rsq=
l In systems without external objectives Acceptance Angle and FOV are
identical.
Time Constant: τ
Typically, detector time response can be described by one pole filter. F-number: F/#
Time Constant is the time it takes detector to reach 1/e ≈ 37% of the F/# is related to the image-space acceptance angle when the system is
initial signal value. focused at infinity.
Time Constant is related to the 3dB High Cut-Off Frequency fhi:
1
τ=
(2 π f hi )

Time Constant is related to 10 – 90% Rise Time tr:

t r=2.2 τ

Preamplifier Parameters
Output Voltage Responsivity: RV Preamplifier Input Noise Current: in
The output voltage divided by optical power incident on the detector. Noise current generated by equivalent current source in parallel with
ideal preamplifier input.
Output Voltage Swing: Vout
The maximum and minimum voltages where preamplifier works in Preamplifier Input Noise Voltage: en
linear range. Noise voltage generated by equivalent voltage source in series with
ideal preamplifier input.
GND
Point of zero potential. For standard preamplifiers is common power Total Input Noise Current: Iin
supply and signal ground. Parameter taking into consideration all noise sources related to the
input.
Low Cut-Off Frequency: flo V
Iin= √(i2PA +i 2d )= n0
A minimum frequency at which a module responsivity (or preamplifier Tr
gain) reaches -3dB of the peak value.
Output Impedance: Rout
High Cut-Off Frequency: fhi Equivalent impedance exhibited by its output terminals.
A maximum frequency at which a module responsivity (or preamplifier
gain) reaches -3dB of the peak value. Load Resistance: RL
Optimal resistance of the load: amplifier's or the measurement
Output Noise device's.
Noise voltage at preamplifier output.
Output Voltage Offset: Voff
Average Output Noise Density: DC component of the output voltage.

√
f2 2
∫f V out (f )df
Power Supply Voltage: Vsup
V n= 1

f 2−f 1 Supply voltage required for correct preamplifier operation. ±20%

tolerance is allowed.
Noise Measurement Frequency: f0
Frequency at which output voltage noise is measured selectively. Power Supply Current: Isup
Supply current consumption during correct preamplifier operation.
Output Noise Density at Specific Frequency: Vn(f0)
Noise voltage density measured at a given frequency. Coupling Type
Preamplifier coupling type. It may be AC for alternate current or DC for
Transimpedance: Ki direct current.
Current to voltage conversion factor (ratio).
V Power Supply Input (+) and (-)
Ki = out Polarity of the power supply related to the ground. Swapping supply
Iin
connectors may lead to module damage.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 5
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 APPLICATION NOTES

ThermoElectric Cooling (TEC)

Heat Sinking
Detector cooling reduces noise, increases responsivity and, in some Suitable heat sinking is necessary to dissipate heat generated by
devices, improves high frequency response. Two-, three- and the Peltier cooler or excessive optical irradiation. Since heat is almost
four-stage TE coolers are available. TEC is biased with DC power. All 100% dissipated at the base of the detector housing, it must be firmly
specifications are given for 300 K heat sink temperature. attached to the heat sink (Figures a and b). Heat sinking via the
mounting screw or via the detector housing cylindrical walls is not
TEC are characterized by: sufficient (Figures c and d). A thin layer of heat conductive epoxy or
silicone grease should be applied to improve thermal contact between
Maximum Temperature Difference: ΔTmax detector housing and heat sink.
ΔTmax rated at Q=0, at other Q the ΔT should be estimated as A heat sink thermal resistance of ~2 K/W is typically required for the
ΔT=ΔTmax(1-Q/Qmax). most two- and three-stage Peltier coolers. Four-stage cooler requires
~1 K/W.
Optimum Current: Iopt
Supply current giving the highest temperature difference (ΔT max) at the YES YES
specified conditions stated in Detector Final Test Report.

Maximum TEC Voltage: Vmax

Voltage drop at ΔTmax.

Maximum Heat Pumping Capacity: Qmax

Qmax rated at ΔT=0, at other ΔT cooling capacity should be estimated
as Q=Q max(1-ΔT/ΔTmax) a b
Standard TEC Parameters
NO NO
Parameter Unit 2TE 3TE 4TE
Tdet K ~230 ~210 ~195
Vmax V 1.3 3.6 8.3
Imax A 1.2 0.45 0.5
Qmax W 0.36 0.27 0.28
ΔTmax K 92 114 125

Temperature Sensor c
The built-in thermistor serves as a sensor of the detector operation d
temperature. TE-cooled detectors are equipped with thermistor type
NCP03XM222E05RL as a standard.
Figures. Heat dissipation from TE-cooled detector

ThermoElectric Cooler Controllers (TECC)

VIGO System offers the standard TEC controller STCC-04, Output Current of the Built-In Power Supply
the miniature TEC controller MTCC-01 and programmable “smart” Maximum current that can be delivered by power supply to the
TEC controllers PTCC-01 (available options: OEM, Basic and preamplifier, usually +/-100 mA.
Advanced).
Series Resistance of the Connecting Cable
Temperature Sensor Inputs Material parameter - resistance of the supply cable. It depends on
Temperature sensor pins – might be connected with any polarity. cable length.

TEC Supply Input (+) and (-) Settling Time of the Set Detector Temperature
Supply polarity for the TEC. Those pins are floating, which means they The time taken by the cooling system to reach appropriate
are not connected to the GND. temperature of the detector.

Maximum TEC Controller Output Current: ITEC Maximum Voltage Across TEC Element
Maximum current that is provided by the controller to the TEC. Maximum voltage for TEC supplying.

Maximum TEC Controller Output Voltage: VTEC

Maximum voltage that is provided by the controller to the TEC.

Ripple of Output Current

It is a small unwanted residual periodic variation of the DC (direct
current) output of a power supply (or other device) which has been
derived from an AC (alternating current) source. This ripple is due to
incomplete suppression of the rectified DC waveform within the power
supply.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 6
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
Application Notes

NCP03XM222E05RL Thermistor Characteristic

The electricity applied to between terminals of thermistors should be Resistance vs Temperature for NCP03XM222E05RL
under the maximum power dissipation at 25 °C (100 mW) not to
Thermistor
destroy the thermosensor. For the measurement of resistance, the
power should not exceed 1 mW.
The relation between the resistance and the temperature: o
T [K] T [ C] Rm in [k Ω] Rnom [k Ω] Rm ax [kΩ]
T −T
R T =R T0⋅exp (β⋅ 0 ) 212 -61 157,81 169,92 182,79
T⋅T 0
214 -59 140,22 150,80 162,03
Values for NCP03XM222E05RL thermistor: 216 -57 124,76 134,02 143,83
• R T0 = 2.2 kΩ ± 3% at T0 = 298 K; 218 -55 111,14 119,25 127,83
220 -53 99,10 106,21 113,72
2000
Thermistor resistance [kOhm]

Rmin, kOhm 222 -51 88,44 94,67 101,25

Rnom, kOhm 224 -49 78,98 84,44 90,21
1800 Rmax, kOhm 226 -47 70,57 75,37 80,42
228 -45 63,09 67,30 71,73
1600 230 -43 56,42 60,12 64,01
232 -41 50,49 53,74 57,15

1400 234 -39 45,19 48,05 51,04

236 -37 40,47 42,98 45,61
238 -35 36,26 38,47 40,77
1200
240 -33 32,51 34,45 36,47
242 -31 29,16 30,87 32,64
1000 244 -29 26,18 27,68 29,24
246 -27 23,51 24,84 26,21
800 248 -25 21,14 22,30 23,51
250 -23 19,02 20,05 21,11
600 252 -21 17,13 18,04 18,98
254 -19 15,45 16,25 17,07
256 -17 13,95 14,65 15,38
400
258 -15 12,61 13,23 13,87
260 -13 11,41 11,96 12,53
200 262 -11 10,34 10,83 11,33
Temperature [K] 264 -9 9,38 9,82 10,26
0 266 -7 8,52 8,91 9,31
180 190 200 210 220 230 240 250 260 270 280 290 300 268 -5 7,75 8,10 8,45
270 -3 7,07 7,37 7,69
o 272 -1 6,45 6,72 7,00
T [K] T [ C] Rm in [kΩ] Rnom [kΩ] Rm ax [kΩ]
274 1 5,89 6,13 6,38
180 -93 1594,97 1757,95 1935,84
276 3 5,38 5,60 5,83
182 -91 1336,02 1469,90 1615,75
278 5 4,93 5,13 5,32
184 -89 1124,16 1234,66 1354,81
280 7 4,52 4,69 4,87
186 -87 950,46 1042,11 1141,58
282 9 4,15 4,30 4,46
188 -85 807,57 883,99 966,78
284 11 3,81 3,95 4,09
190 -83 689,57 753,62 822,88
286 13 3,50 3,63 3,75
192 -81 591,68 645,64 703,89
194 -79 510,07 555,75 604,98 288 15 3,22 3,33 3,45

196 -77 441,68 480,54 522,34 290 17 2,96 3,06 3,17

198 -75 384,05 417,25 452,91 292 19 2,73 2,82 2,91

200 -73 335,23 363,71 394,26 294 21 2,51 2,59 2,68

202 -71 293,65 318,17 344,43 296 23 2,32 2,39 2,46

204 -69 258,05 279,23 301,88 298 25 2,13 2,20 2,27

206 -67 227,41 245,76 265,36

208 -65 200,91 216,85 233,85
210 -63 177,89 191,77 206,55

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 7
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
Application Notes

Optical Immersion
Optical immersion is achieved by using high refractive index
microlenses in order to improve performance of the devices but may
limit acceptance angle.

Optical immersion is monolithic integration of detector element with

hyperhemispherical microlens (basic configuration) that makes optical
size of detector 11 times larger compared to its physical size. This
results in improvement of D* by one order of magnitude and electric
capacitance by a factor of two orders of magnitude less compared to
conventional detector of the same optical area.
Function and properties of hemispherical and hyperhemispherical
lenses are illustrated in the Figure and the Table below.

Hemisphere Hyperhemisphere
Parameter Symbol
Theory GaAs Theory GaAs
Distance L R R R(n+1) 4.3R
d
- n 3.3 n2 10.9
d'
D*imm
- n 3.3 n2 10.9
D*non−imm
Acceptance
Φ 180° 180° 2arcsin(1/n) 35°
Angle
F/# - 0.5 0.5 n/2 1.62
Table. Immersed Detectors Parameters

n – a refractive index of a lens material (~3.3 for GaAs used by VIGO)

d – optical (apparent) detector size
d' – physical detector size
R – lens radius
L – lens face to objective focal plane distance
R
h=R + - lens thickness
n

The values in the above Table show the relative change of a given
parameter comparing to a non-immersed detector of the same optical
size.
Detectors with custom acceptance angles are available upon
Figure. Function and properties of hemispherical and
request.
hyperhemispherical lense
Immersion Technology is described in “Infrared Detectors and
Systems”, E.L. Dereniak and G.D. Boreman, Wiley Interscience, 2000.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 8
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
Application Notes

Preamplifiers for IR Photodetectors

Preamplifiers are used to amplify weak signals from low noise Noise
photodetectors and provide optimal conditions for detector operation.
As follows from the transimpedance circuit (Figure 1), the preamplifier
In addition, preamplifiers protect detectors against overbias and make
noise current can be approximated as:
the detector/preamplifier system immune to electromagnetic
2
interferences. 2 4 k T 2 en
We offer a variety of transimpedance preamplifiers, AC and DC iPA = +in + 2 (6)
Rf Zd
coupled, with narrow and wide bandwidths, standing alone or
integrated with detector in common packages called Detection
Modules. The transimpedance preamplifiers are preferable in most of where in and en are the op-amp open input noise current and short
applications due to inherent linearity and good frequency response. input noise voltage, respectively. Zd is the detector impedance:
Rd
Zd= (7)
Transimpedance Preamplifiers √1+(2π f⋅Cd⋅Rd)2
The current readout of infrared detectors is typically achieved in
transimpedance (TI) preamplifiers. Important advantage of the TI amp At low frequencies preamplifier noise (frequently called „floor noise
is the ability to maintain the detector at constant bias voltage, equal to level”) is not dependent on frequency:
voltage applied to the non-inverting input of the op-amp. 2
Simple description of the detector/TI preamplifier system, 2 4 k T 2 en
iPA = +in + 2 (8)
schematically shown in Figure 1. The detector is modeled by Rf Rd
a photocurrent source Iph, shunt resistance Rd and capacitance Cd. The
photocurrent is proportional to the input optical power P and detector
At large frequencies the noise current increases due to decreasing
current responsivity Ri.
detector impedance:
Iph=Ri⋅P (1) iPA =2π f⋅Cd⋅en (9)

Transimpedance preamplifier is an operational amplifier with feedback

Incorrect frequency compensation of transimpedance amplifier may
resistance Rf. Feedback capacitance Cf is used to set system
cause remarkable increase of the noise level near the top cut-off
bandwidth and eliminate gain peaking at high frequencies.
frequency (as shown in Figure 2).

Cf
Rf

Input current noise

en
Ouput voltage noise
in VO Transimpedance
Iph Rd Cd

Figure 1. Transimpedance circuit for infrared photodetector

The output voltage of the transimpedance preamplifier is:
V 0 =Z f⋅Iph (2)

Figure 2. Output noise density and frequency response of

The transimpedance gain Zf can be approximated by one-pole filter
the transimpedance amplifier.
characteristics:
Rf
Zf = (3) How Preamplifier Affects System Performance
√1+(2 π f)2⋅Cf2⋅R f2 Total input current noise of a detection module is:
i2n =i2PA +i 2d (10)
with cut-off frequency:
1
f ∞= (4) This results in degradation of the overall detectivity of the
2π f⋅Cf⋅R f detector/preamplifier system by in/id factor.
The degradation may be significant for low impedance detectors-
It should be noted that the cut-off frequency is typically greater having low resistance <50 Ω) or, at high frequencies, having large
compared with the voltage preamplifier when bandwidth is limited by capacitance.
the detector Rd∙Cd time constant. For frequencies less than the 3dB The design of preamplifiers is dependent on required bandwidth, gain,
cut-off frequency f∞, transimpedance is equal to Rf. In consequence, detector resistance, capacitance and other factors. The crucial step is
the circuit converts linearly optical input power P into output voltage: the selection of suitable op-amps or discrete transistors. Bipolar
V 0 =R i⋅R f⋅P (5) pA nV
op-amps are characterized by large in ≈ 2 and low en ≈1 ,
√Hz √Hz
fA
with resulting voltage responsivity Rv=Ri∙Rf independent on frequency, in contrast to FET-based preamplifiers where in is low ≈1 and en
detector resistance and capacitance. √Hz
nV
Unfortunately, the above considerations are limited to maximal is large ≈5 . Therefore, the low en-bipolar op-amps suits well to
frequencies dependent on detector capacitance and resistance, √Hz
op-amp gain-bandwidth product and other factors. low Zd detectors (which means low resistance, large capacitance and
high frequencies). FET-based op-amps are useful for high Z d detectors
operating at low frequencies.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 9
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
Application Notes

IR Detectors Packages Applications

VIGO detectors are mounted in several packages (please see Table The typical applications of the VIGO System S.A. detectors are given
below). in the Table below. Please, provide detailed system requirements –
The packages are filled with dry, heavy noble gases for low thermal our Engineering Team recommend optimum solution.
conductivity (Kr/Xe mixtures). Water vapor condensation is prevented
by careful sealing and water absorbers applied inside the package.
Applications Detector Series - Examples

Package Detector Type Spectroscopy PCI-2TE, PVI-nTE, PVI, PCI

TO8 Positioning Systems PV, PV-2TE

PC*), PCI*), PV*), PVI*), PVM*), PVMI*),
PC-nTE, PCI-nTE, PV-nTE, PVI-nTE, PV, PV-2TE, PVM, PVM-2TE, PEM,
Laser Metrology
PVM-nTE, PVMI-nTE, PEMI
PCQ, PVMQ
High Speed Operation PVI-nTE, PVI, PVM, PVMI, PEM, PEMI
TO39
Analysis of Spatial and
PC, PCI, PV, PVI, PVM, PVMI
Time Distribution of Laser PV, PV-nTE, PVM, PVM-nTE
Beam
BNC
Remote Temperature PV-nTE, PVI-nTE, PVI-nTE, PCI,
Measurements PCI-nTE
PC, PCI, PV, PVI, PVM, PVMI
Heterodyne Detection PV-2TE, PVI-nTE, PCI, PCI-nTE
Biomedical Applications PV, PVI-nTE, PVM, PVMI, PEM, PEMI
PEM
Pyrometers, Scanners PV-2TE, PVI-nTE, PCI, PCI-nTE
Thermal Imagers PV-2TE, PVI-nTE, PCI, PCI-nTE
PEM, PEMI
Gas Analysis PCI-2TE, PVI-nTE, PVI, PCI
LIDAR PVI-nTE, PCI-nTE
Quadrant *) Detection and Monitoring
PV-2TE, PVI-nTE PCI, PCI-nTE
of Thermal Objects
Laser-Matter Interaction PV, PV-2TE, PVM, PVM-2TE, PEM,
PCQ, PVMQ Studies PEMI
Fire, Flame and Human
PV-2TE, PVI-nTE, PCI, PCI-nTE
Body Detection
*)
Upon special request. Free Space Optical
PVI-nTE, PVI
For detailed information please see Appendix – Technical Drawings. Communication
Laser Threat Warning PCI, PVI, PVMI
Tracking Systems PV, PV-2TE, PC, PCI, PCI-2TE, PC-2TE
Nondestructive Material
All Devices
Testing

IR Windows
VIGO TE cooled detectors are typically provided with:
• 3° wedged Al2O3 windows (wAl2O3)
• 3° wedged ZnSe AR coated windows (wZnSeAR)

3° wedge prevents “fringing” - interference from stray back reflections.

We offer windows optimized for different spectral bands also.

Percentage of MWIR and LWIR radiation that can pass through VIGO
detector windows is presented in the Figures below. Windows can be
anti-reflection (AR) coated on two surfaces.

It is possible to use windows provided by the User (upon request).

Figure. Percentage of IR radiation that can pass through the window.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 10
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Application Notes

Custom Engineering / Design

On the following pages of this catalogue you will find detailed
specifications of devices that are currently offered by VIGO System.
However, our Engineering Team - including engineers experienced in
optoelectronics, mechanical engineering and electronics is ready to
help solve the most sophisticated and complex problems related to
infrared radiation detection & measurements.
The technology developed at VIGO System is very flexible, permitting
construction of devices for specific applications.

Precautions for Use

Operating Temperature Soldering Leads
A detector should be operated at its optimal temperature given in IR detectors can be easily damaged by excessive heat. Special care
the Final Test Report (delivered with every device). should be taken when soldering the leads. Usage of heat sinks is
highly recommended. Tweezers can be used for this purpose; when
Maximum Voltage soldering, clamp a lead at a place between the soldering iron and the
Do not operate the PV detector at higher bias voltages than suggested base of the package. To avoid destructive influence of ESD and other
in the Final Test Report (delivered with every device). accidental voltages (e.g. from a non-grounded soldering iron) rules for
handling LSI integrated circuits should be applied to IR detectors too.
Leads should be soldered at +370 °C or below within 5 s.
Be Careful Using Ohmmeters for PV Detectors!
Standard ohmmeters may overbias and damage the detector. This is
especially true for small physical area or SWIR PV detectors. Bias of Beam Power Limitations
10 mV can be used for resistance measurements of any type Damage thresholds, specified as integrated power of incoming
of detector. radiation:
Ask for conditions of I-V plot measurements! • for detectors without immersion lens irradiated with
continuous wave (CW) or single pulse longer than 1 µs
irradiance on the active area must not exceed 100 W/cm2.
Usage The irradiance of the pulse shorter than 1 µs must not
Devices can operate in the 10% to 80 % humidity, in the -20 °C to
exceed 1 MW/cm2,
+30 °C ambient temperature range. Operation at >30 °C ambient
• for optically immersed detectors irradiated with CW or single
may reduce performance for standard Peltier coolers..
pulse longer than 1 µs irradiance on the apparent optical
Ask for systems that can operate in the +30 °C to +80 °C ambient
active area must not exceed 2.5 W/cm2. The irradiance of
temperature range.
the pulse shorter than 1 µs must not exceed 10 kW/cm2,
• for repeated irradiation with pulses shorter than 1 µs,
Storage the equivalent CW irradiation, average power over
The following conditions should be fulfilled for safe and reliable the pulse - to - pulse period should be less than the CW
operation of detector: damage threshold according to equation:
• store in dark place, 10% to 90% humidity and -20 °C to
+50 °C temperature,
power ) ( ) (duration) ( rate )
equivalent CW = pulsepeak power ⋅ pulse ⋅ repetition
• avoid exposing to the direct sunlight and strong UV/VIS light
as this may result in degradation of the detector
(radiation focus area
performance,
• avoid electrostatic discharges at leads therefore, the devices Saturation thresholds vary by detector type and can be provided upon
should be stored having leads shorted. request.

Handling
Some IR Window materials such as BaF 2 are soft and brittle. Particular
attention should be paid to not scratch a surface of the window.
A damaged window may entirely degrade the detector performance.
Excessive mechanical stress applied to the package itself or to
a device containing the package may result in permanent damage.
Peltier element inside thermoelectrically cooled detectors is
susceptible to mechanical shocks. Great care should be taken when
handling cooled detectors.

Cleaning Window
Keep the Window clean. Use a soft cotton cloth damped with isopropyl
alcohol and wipe off the surface gently if necessary.

Mechanical Shocks
The Peltier elements may be damaged by excessive mechanical
shock or vibration. Care is recommended during manipulations and
normal use. Drop impacts against a hard surface are particularly
dangerous.

Shaping Leads
Avoid bending the leads at a distance less than 2 mm from a base of
the package to prevent glass seal damage. When shaping the leads,
maximum two right angle bends and three twists at the distance
minimum 6 mm from the base of the package.
Keep the leads of the detecting element shorted when shaping!

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 11
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 ORDER CODE
How to Compile Your Order Code?
Different information such as detector type, optical immersion, number Below, there are information needed to specify exactly the required
of stages TE-cooler, the wavelength a detector is optimized for, detector.
dimensions of optical area, package type, window type and FOV
combine to create VIGO System's Detector Order Code.

Type Immersion - Cooling - λopt - Length x Width - Package Type - Window - FOV
Type Immersion - Cooling - λopt - ΦDiameter - Package Type - Window - FOV

Examples
PVI-2TE-5-0.1x0.1-TO8-wBaF2-35
PV I - 2TE - 5 - 0.1 x 0.1 - TO8 - wAl2O3 - 36

PEM-10.6-1x1-PEM-wBaF2-51
PEM - - 10.6 - 1 x 1 1 PEM - wZnSeAR - 51

PC-10.6-1x1-BNC-NoWindow-102
PC - - 10.6 - 1 x 1 1 BNC - NoWindow - 102

PVI-2TE-6-Φ0.05-TO8-pGeAR-60
PV I - 2TE - 6 - Φ0.05 - TO8 - pGeAR - 36

Detector Types
PC – photoconductor PEM – photoelectromagnetic detector
PV – single junction photovoltaic detector PCQ – quadrant photoconductor
PVM – LWIR multiple junction photovoltaic detector PVMQ – quadrant LWIR multiple junction photovoltaic detector

Optical Immersion TE Cooling

All detectors can be monolithically integrated with immersion VIGO PC, PV and PVM detectors are available as uncooled devices or
microlens. Please add letter “I” to the end of Detector Type symbol for equipped with multiple stage TE cooling. Please add “2TE”, “3TE” or
immersed detectors. Hyperhemispherical immersion microlens is “4TE” for two-, three-, or four stage TE cooled detectors respectively.
offered as a standard.

Wavelength Range and Optimum Wawalength λopt

VIGO standard detectors are optimized for specific wavelength (see
Table below). Other wavelengths are available as an option.

Detector Type Optimum Wavelength [μm]

PC, PCI 4 5 6 9 10.6
PC-2TE, PCI-2TE 4 5 6 9 10.6 12 13
PC-3TE, PCI-3TE 9 10.6 12 13
PC-4TE, PCI-4TE 9 10.6 12 13 14
PV, PVI 3 3.4 4 5 6 8
PV-nTE, PVI-nTE 3 3.4 4 5 6 8 10.6
PVM, PVMI, PVM-nTE, PVMI-nTE 8 10.6
PEM, PEMI, PCQ, PVMQ 10.6

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 12
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Order Code

Optical Area Availability Table

Typical VIGO detectors are squared-shaped. Single junction Please specify dimension (length×width) for square or diameter (Φ) for
photovoltaic devices are also available as a circular upon request. circular areas.

Detector Type Optical Area [mm×mm]

0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PV-3 O X X O O O
PV-2TE-3 O X X O O O
PV-3TE-3 O X X O O O
PV-4TE-3 O X X O O O
PVI-3 O X X O
PVI-2TE-3 O X X O
PVI-3TE-3 O X X O
PVI-4TE-3 O X X O
PV-3.4 O X X O O O
PV-2TE-3.4 O X X O O O
PV-3TE-3.4 O X X O O O
PV-4TE-3.4 O X X O O O
PVI-3.4 O X X O
PVI-2TE-3.4 O X X O
PVI-3TE-3.4 O X X O
PVI-4TE-3.4 O X X O
PC-4 X X X X X X X X X X
PC-2TE-4 X X X X X X X X
PCI-4 X X X X
PCI-2TE-4 X X X X
PV-4 O X X O O O
PV-2TE-4 O X X O O O
PV-3TE-4 O X X O O O
PV-4TE-4 O X X O O O
PVI-4 O X X O
PVI-2TE-4 O X X O
PVI-3TE-4 O X X O
PVI-4TE-4 O X X O
PC-5 X X X X X X X X X X
PC-2TE-5 X X X X X X X X
PCI-5 X X X X
PCI-2TE-5 X X X X
PV-5 O X X O O O
PV-2TE-5 O X X O O O
PV-3TE-5 O X X O O O
PV-4TE-5 O X X O O O
PVI-5 O X X O
PVI-2TE-5 O X X O
PVI-3TE-5 O X X O
PVI-3TE-5 O X X O
PVI-4TE-5 O X X O
PC-6 X X X X X X X X X X
PC-2TE-6 X X X X X X X X
PCI-6 X X X X
PCI-2TE-6 X X X X
PV-6 O X X O O O
PV-2TE-6 O X X O O O
PV-3TE-6 O X X O O O
PV-4TE-6 O X X O O O
PVI-6 O X X
PVI-2TE-6 O X X
PVI-3TE-6 O X X
PVI-4TE-6 O X X
PV-8 X X*) P
PV-2TE-8 X X*) P
PV-3TE-8 X X*) P
PV-4TE-8 X X*) P
PVI-8 X X*) P
PVI-2TE-8 X X*) P
PVI-3TE-8 X X*) P
PVI-4TE-8 X X X*) P
PVM-8 O O X X O O X X X X
PVM-2TE-8 O O X X O O X X X
PVMI-8 O O X X
PVMI-2TE-8 O O X X
PVMI-3TE-8 O O X X
PVMI-4TE-8 O O X X
PC-9 X X X X X X X X X X
PC-2TE-9 X X X X X X X X
PC-3TE-9 X X X X X X X X
PC-4TE-9 X X X X X X X X
PCI-9 X X X X
PCI-2TE-9 X X X X
PCI-3TE-9 X X X X
PCI-4TE-9 X X X X
PC-10.6 X X X X X X X X X X
PC-2TE-10.6 X X X X X X X X
PC-3TE-10.6 X X X X X X X X
PC-4TE-10.6 X X X X X X X X

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 13
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Order Code

Detector Type Optical Area [mm×mm]

0.025×0.025 0.05×0.05 0.1×0.10.25×0.25 0.2×0.2
0.5×0.5 1×1 2×2 3×3 4×4
PCI-10.6 X X X X
PCI-2TE-10.6 X X X X
PCI-3TE-10.6 X X X X
PCI-4TE-10.6 X X X X
*)
PV-2TE-10.6 X X P
*)
PV-3TE-10.6 X X P
PV-4TE-10.6 X X*) P
PVI-2TE-10.6 X X*) P
PVI-3TE-10.6 X X*) P
PVI-4TE-10.6 X X*) P
PVM-10.6 O O X X O O X X X X
PVM-2TE-10.6 O O X X O O X X X
PVMI-10.6 O O X X
PVMI-2TE-10.6 O O X X
PVMI-3TE-10.6 O O X X
PVMI-4TE-10.6 O O X X
PEM-10.6 O O O O X X
PEMI-10.6 O O X X
PCQ-10.6 X X X X X X X X X
PC-2TE-12 X X X X X X X X
PC-3TE-12 X X X X X X X X
PC-4TE-12 X X X X X X X X
PCI-2TE-12 X X X X
PCI-3TE-12 X X X X
PCI-4TE-12 X X X X
PC-2TE-13 X X X X X X X X
PC-3TE-13 X X X X X X X X
PC-4TE-13 X X X X X X X X
PCI-2TE-13 X X X X
PCI-3TE-13 X X X X
PCI-4TE-13 X X X X
PC-4TE-14 X X X X
PCI-4TE-14 X X X X
*)
Devices may require reverse bias in order to increase dynamic resistance and improve frequency response.
X – standard detector - operating without bias
P – default - operating with reverse bias
O – detectors available upon request, parameters may vary from these in data sheets

Package Type
VIGO detectors are typically offered in four different packages:
Package Type Detector Type
BNC, TO39 PC, PCI, PV, PVI, PVM, PVMI
TO8 PC-nTE, PCI-nTE, PV-nTE, PVI-nTE, PVM-nTE, PVMI-nTE, PCQ, PVMQ
PEM PEM, PEMI

Window Type
VIGO TE cooled detectors are typically provided with: When no window is needed (for uncooled detectors), “NoWindow”
• 3° wedged Al2O3 windows (wAl2O3) attribute must be added.
• 3° wedged ZnSe AR coated window (wZnSeAR)

Other Windows are available as following options:

Hardness Hardness
Material AR Coating Symbol Material AR Coating Symbol
[kg/mm2] [kg/mm2]
BaF2 82 wedged no wBaF2 yes wAl2O3AR
wedged
wedged yes wSiAR no wAl2O3
Si 1100 Al2O3 1370
planar yes pSiAR yes pAl2O3AR
planar
wedged yes wZnSeAR no pAl2O3
ZnSe 120
planar yes pZnSeAR wedged yes wGeAR
Ge 780
planar yes pGeAR
black – standard (without extra charge)
red – nonstandard with extra charge

Field of View: FOV

Angular field of view of detector in degrees [ °]. FOV depends on type of immersion microlens applied and package used for the detector. For
detailed information please see Appendix – Technical Drawings.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 14
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 Infrared Detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 15
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 Feature Optimal Wavelength λopt, [µm] Operating Immersion
Parameter Cooling Page
Series 3 3.4 4 5 6 8 9 10.6 12 13 14 Temperature Lens
1/2 9 9 8 7 6
D* [cm·Hz ·W-1] 2.0×10 1.0×10 3.0×10 2.0×10 9.0×10
PC-λopt uncooled ~300K no 17
τ [ns] 1000 500 200 2 1
1/2 10 10 9 8 8 7 6
D* [cm·Hz ·W-1] 2.0×10 1.0×10 3.0×10 4.5×10 1.4×10 4.5×10 9.0×10
PC-2TE-λopt 2TE ~230K no 18
τ [ns] 4000 2000 1000 20 10 2 2
1/2 9 8 7 7
D* [cm·Hz ·W-1] 1.5×10 2.5×10 9.0×10 6.0×10
PC-3TE-λopt 3TE ~210K no 19
τ [ns] 7 5 5 4
D* [cm·Hz1/2·W-1] 5.0×109 1.0×109 7.0×108 4.0×108 1.4×108
PC-4TE-λopt 4TE ~195K no 20
τ [ns] 8 7 7 6 5
D* [cm·Hz1/2·W-1] 6.0×109 4.0×109 1.0×109 1.0×108 9.0×107
PCI-λopt uncooled ~300K yes 21
τ [ns] 1000 500 200 2 1
1/2 10 10 10 9 9 8 8
D* [cm·Hz ·W-1] 4.0×10 2.0×10 1.0×10 4.0×10 1.4×10 4.5×10 2.3×10
PCI-2TE-λopt 2TE ~230K yes 22
τ [ns] 4000 2000 1000 20 10 2 2
1/2 9 9 8 8
D* [cm·Hz ·W-1] 6.0×10 2.5×10 9.0×10 4.5×10
PCI-3TE-λopt 3TE ~210K yes 23
τ [ns] 7 5 5 4
1/2 10 9 9 9 9
D* [cm·Hz ·W-1] 2.0×10 8.0×10 5.0×10 3.0×10 1.0×10
PCI-4TE-λopt 4TE ~195K yes 24
τ [ns] 8 7 7 6 5
1/2 6
D* [cm·Hz ·W-1] 9.0×10
PCQ-λopt uncooled ~300K no 25
τ [ns] 1
D* [cm·Hz1/2·W-1] 1.0×107
PEM-λopt uncooled ~300K no 26
τ [ns] 1
D* [cm·Hz1/2·W-1] 5.0×107
PEMI-λopt uncooled ~300K yes 27
τ [ns] 1
1/2 9 9 9 9 8 7
D* [cm·Hz ·W-1] 6.5×10 5.0×10 3.0×10 1.0×10 5.0×10 4.0×10
PV-λopt uncooled ~300K no 28
τ [ns] 350 260 150 120 80 4
1/2 10 10 10 9 9 8 8
D* [cm·Hz ·W-1] 7.0×10 4.0×10 3.0×10 9.0×10 2.0×10 2.0×10 1.0×10
PV-2TE-λopt 2TE ~230K no 29
τ [ns] 280 200 100 80 50 30 10
1/2 11 10 10 10 9 8 8
D* [cm·Hz ·W-1] 1.0×10 7.0×10 4.0×10 1.0×10 4.0×10 3.0×10 1.5×10
PV-3TE-λopt 3TE ~210K no 30
τ [ns] 280 200 100 80 50 30 10
D* [cm·Hz1/2·W-1] 1.5×1011 1.0×1011 6.0×1010 1.5×1010 5.0×109 4.0×108 2.0×108
PV-4TE-λopt 4TE ~195K no 31
τ [ns] 280 200 100 80 50 30 10
D* [cm·Hz1/2·W-1] 5.0×1010 4.5×1010 2.0×1010 9.0×109 4.0×109 4.0×108
PVI-λopt uncooled ~300K yes 32
τ [ns] 350 260 150 120 80 4
D* [cm·Hz1/2·W-1] 5.5×1011 3.0×1011 2.0×1011 6.0×1010 2.0×1010 2.0×109 1.0×109
PVI-2TE-λopt 2TE ~230K yes 33
τ [ns] 280 200 100 80 50 30 10
1/2 11 11 11 10 10 9 9
D* [cm·Hz ·W-1] 7.0×10 5.0×10 3.0×10 8.0×10 3.0×10 3.0×10 1.5×10
PVI-3TE-λopt 3TE ~210K yes 34
τ [ns] 280 200 100 80 50 30 10
1/2 11 11 11 11 10 9 9
D* [cm·Hz ·W-1] 8.0×10 7.0×10 4.0×10 1.0×10 4.0×10 4.0×10 2.0×10
PVI-4TE-λopt 4TE ~195K yes 35
τ [ns] 280 200 100 80 50 30 10
1/2 7 7
D* [cm·Hz ·W-1] 6.0×10 1.0×10
PVM-λopt uncooled ~300K no 36
τ [ns] 4 1.5
D* [cm·Hz1/2·W-1] 3.0×108 1.0×108
PVM-2TE-λopt 2TE ~230K no 37
τ [ns] 4 3
D* [cm·Hz1/2·W-1] 3.0×108 1.0×108
PVMI-λopt uncooled ~300K yes 38
τ [ns] 4 1.5
D* [cm·Hz1/2·W-1] 2.0×109 1.0×109
PVMI-2TE-λopt 2TE ~230K yes 39
τ [ns] 4 3
1/2 9 9
D* [cm·Hz ·W-1] 3.0×10 1.5×10
PVMI-3TE-λopt 3TE ~210K yes 40
τ [ns] 4 3
1/2 9 9
D* [cm·Hz ·W-1] 6.0×10 2.0×10
PVMI-4TE-λopt 4TE ~195K yes 41
τ [ns] 4 3

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 16
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PC Series 2 – 11 μm IR PHOTOCONDUCTORS

Example of D* vs Wavelength λ for PC Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PC-λopt (λopt - optimal wavelength in micrometers) feature IR photoconductive
• Perfect match to fast electronics detector.
• Convenient to use This series is easy to use, no cooling or heatsink needed. The devices are optimized
• Wide dynamic range for the maximum performance at λopt. Cut-on wavelength is limited by GaAs
• Low cost transmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low
• Prompt delivery frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability
• Custom design upon request are achieved by application of variable gap (HgCd)Te semiconductor, optimized
doping and sophisticated surface processing.
Standard detectors are available in TO39 or BNC packages without windows. Various
windows, other packages and connectors are available upon request.

IR Detector Specification @20°C

Parameter Symbol Unit PC-4 PC-5 PC-6 PC-9 PC-10.6
Optimal Wavelength*) λopt µm 4 5 6 9 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥3.2×109 ≥1.5×109 ≥7.0×108 ≥1.0×108 ≥1.9×107
W
@ λopt, 20 kHz ≥2.0×109 ≥1.0×109 ≥3.0×108 ≥2.0×107 ≥9.0×106
Voltage Responsivity - V⋅mm
Rv·w ≥100 ≥40 ≥6 ≥0.4 ≥0.1
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤1000 ≤500 ≤200 ≤2 ≤1
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 1 to 5 1 to 10 1 to 15 2 to 20 5 to 30
w mm
Sheet Resistance Rsq Ω 300 to 1000 200 to 400 100 to 300 50 to 150 40 to 120
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - >90, 0.71
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PC-4 X X X X X X X X X X
PC-5 X X X X X X X X X X
PC-6 X X X X X X X X X X
PC-9 X X X X X X X X X X
PC-10.6 X X X X X X X X X X
X – standard detectors

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 2 – 13 μm IR PHOTOCONDUCTORS
PC-2TE Series
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PC-2TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 13 μm spectral range The PC-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photoconductive detector on two-stage thermoelectrical cooler.
• Convenient to use The devices are optimized for the maximum performance at λopt. Cut-on wavelength is
• Wide dynamic range limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Compact, rugged and reliable Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
• Low cost performance and stability are achieved by application of variable gap (HgCd)Te
• Prompt delivery semiconductor, optimized doping and sophisticated surface processing.
• Custom design upon request Custom devices with quadrant cells, multielement arrays, different windows, lenses
and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PC-2TE-4 PC-2TE-5 PC-2TE-6 PC-2TE-9 PC-2TE-10.6 PC-2TE-12 PC-2TE-13
Optimal Wavelength*) λopt µm 4 5 6 9 10.6 12 13
Detectivity**):
cm⋅√Hz
@ λpeak, 20 kHz D* ≥3.2×1010 ≥2.0×1010 ≥6.0×109 ≥9.0×108 ≥4.0×108 ≥1.0×108 ≥4.0×107
W
@ λopt, 20 kHz ≥2.0×1010 ≥1.0×1010 ≥3.0×109 ≥4.5×108 ≥1.4×108 ≥4.5×107 ≥2.0×107
Voltage Responsivity - V⋅mm
Rv·w ≥1000 ≥500 ≥70 ≥5 ≥1.5 ≥0.5 ≥0.25
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤4000 ≤2000 ≤1000 ≤20 ≤10 ≤2 ≤2
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 1 to 2 2 to 4 4 to 8 4 to 10 5 to 15
w mm
Sheet Resistance Rsq Ω 600 to 1500 300 to 500 200 to 400 80 to 200 50 to 150 60 to 100 40 to 120
Operating Temperature T K ~230
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PC-2TE-4 X X X X X X X X
PC-2TE-5 X X X X X X X X
PC-2TE-6 X X X X X X X X
PC-2TE-9 X X X X X X X X
PC-2TE-10.6 X X X X X X X X
PC-2TE-12 X X X X X X X X
PC-2TE-13 X X X X X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 18
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 13 μm IR PHOTOCONDUCTORS
PC-3TE Series
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PC-3TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 13 μm spectral range The PC-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photoconductive detector on three-stage thermoelectrical cooler.
• Convenient to use The devices are optimized for the maximum performance at λopt. Cut-on wavelength is
• Wide dynamic range limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Compact, rugged and reliable Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
• Low cost performance and stability are achieved by application of variable gap (HgCd)Te
• Prompt delivery semiconductor, optimized doping and sophisticated surface processing.
• Custom design upon request Custom devices with quadrant cells, multielement arrays, different windows, lenses
and optical filters are available upon request.
Standard detectors are available in TO8 packages with wZnSeAR windows. Other
packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PC-3TE-9 PC-3TE-10.6 PC-3TE-12 PC-3TE-13
Optimal Wavelength*) λopt µm 9 10.6 12 13
Detectivity**):
cm⋅√Hz
@ λpeak, 20 kHz D* ≥2.9×109 ≥4.5×108 ≥1.8×108 ≥1.2×108
W
@ λopt, 20 kHz ≥1.5×109 ≥2.5×108 ≥9.0×107 ≥6.0×107
Voltage Responsivity - V⋅mm
Rv·w ≥15 ≥3 ≥1.5 ≥1
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤7 ≤5 ≤5 ≤4
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 4 to 10
w mm
Sheet Resistance Rsq Ω 60 to 200 40 to 150
Operating Temperature T K ~210
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PC-3TE-9 X X X X X X X X
PC-3TE-10.6 X X X X X X X X
PC-3TE-12 X X X X X X X X
PC-3TE-13 X X X X X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 19
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 14 μm IR PHOTOCONDUCTORS
PC-4TE Series
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PC-4TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 14 μm spectral range The PC-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photoconductive detector on four-stage thermoelectrical cooler.
• Convenient to use The devices are optimized for the maximum performance at λopt. Cut-on wavelength is
• Wide dynamic range limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Compact, rugged and reliable Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
• Low cost performance and stability are achieved by application of variable gap (HgCd)Te
• Prompt delivery semiconductor, optimized doping and sophisticated surface processing.
• Custom design upon request Custom devices with quadrant cells, multielement arrays, different windows, lenses
and optical filters are available upon request.
Standard detectors are available in TO8 packages with wZnSeAR windows. Other
packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PC-4TE-9 PC-4TE-10.6 PC-4TE-12 PC-4TE-13 PC-4TE-14
Optimal Wavelength*) λopt µm 9 10.6 12 13 14
Detectivity**):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥5.0×109 ≥9.0×108 ≥4.0×108 ≥2.0×108 ≥5.0×107
W
@ λopt, 20 kHz ≥3.0×109 ≥5.0×108 ≥2.0×108 ≥1.0×108 ≥3.0×107
Voltage Responsivity - V⋅mm
Rv·w ≥25 ≥5 ≥3 ≥2 ≥1
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤8 ≤7 ≤7 ≤6 ≤5
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 4 to 10
w mm
Sheet Resistance Rsq Ω 80 to 250 60 to 200 50 to 150
Operating Temperature T K ~195
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PC-4TE-9 X X X X X X X X
PC-4TE-10.6 X X X X X X X X
PC-4TE-12 X X X X X X X X
PC-4TE-13 X X X X X X X X
PC-4TE-14 X X X X X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 20
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 11 μm IR PHOTOCONDUCTORS
PCI Series
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PCI Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PCI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature
• Perfect match to fast electronics IR photoconductive detector, optically immersed to high refractive index GaAs
• Convenient to use hyperhemispherical (standard) or hemispherical or any intermediate lens (as option)
• Wide dynamic range for different acceptance angle and saturation level.
• Low cost This series is easy to use, no cooling or heatsink needed. The devices are optimized
• Prompt delivery for the maximum performance at λopt. Cut-on wavelength is limited by GaAs
• Custom design upon request transmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low
frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability
are achieved by application of variable gap (HgCd)Te semiconductor, optimized
doping and sophisticated surface processing.
Standard detectors are available in TO39 or BNC packages without windows. Various
windows, other packages and connectors are available upon request.

IR Detector Specification @20°C

Parameter Symbol Unit PC-4 PC-5 PC-6 PC-9 PC-10.6
Optimal Wavelength*) λopt µm 4 5 6 9 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥1.0×1010 ≥6.0×109 ≥2.5×109 ≥5.0×108 ≥1.0×108
W
@ λopt, 20 kHz ≥6.0×109 ≥4.0×109 ≥1.0×109 ≥1.0×108 ≥8.0×107
Voltage Responsivity - V⋅mm
Rv·w ≥600 ≥300 ≥60 ≥3 ≥1
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤1000 ≤500 ≤200 ≤2 ≤1
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 1 to 2 2 to 4 3 to 10 3 to 15 5 to 20
w mm
Sheet Resistance Rsq Ω 300 to 1000 200 to 400 100 to 300 50 to 150 40 to 120
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PCI-4 X X X X
PCI-5 X X X X
PCI-6 X X X X
PCI-9 X X X X
PCI-10.6 X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 21
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 13 μm IR PHOTOCONDUCTORS
PCI-2TE Series THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PCI-2TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 13 μm spectral range The PCI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photoconductive detector on two-stage thermoelectrical cooler, optically
• Convenient to use immersed to high refractive index GaAs hyperhemispherical (standard) or
• Wide dynamic range hemispherical or any intermediate lens (as option) for different acceptance angle and
• Compact, rugged and reliable saturation level.
• Low cost The devices are optimized for the maximum performance at λopt. Cut-on wavelength is
• Prompt delivery limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Custom design upon request Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
performance and stability are achieved by application of variable gap (HgCd)Te
semiconductor, optimized doping and sophisticated surface processing.
Custom devices with quadrant cells, multielement arrays, different windows, lenses
and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PCI-2TE-4 PCI-2TE-5 PCI-2TE-6 PCI-2TE-9 PCI-2TE-10.6 PCI-2TE-12 PCI-2TE-13
Optimal Wavelength*) λopt µm 4 5 6 9 10.6 12 13
Detectivity**):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥6.0×1010 ≥4.0×1010 ≥2.0×1010 ≥1.0×1010 ≥3.5×109 ≥1.0×109 ≥4.0×108
W
@ λopt, 20 kHz ≥4.0×1010 ≥2.0×1010 ≥1.0×1010 ≥4.0×109 ≥1.4×109 ≥4.5×108 ≥2.3×108
Voltage Responsivity - V⋅mm
Rv·w ≥6000 ≥3000 ≥600 ≥40 ≥15 ≥5 ≥2.5
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤4000 ≤2000 ≤1000 ≤20 ≤10 ≤2 ≤2
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 0.05 to 0.3 0.1 to 0.5 0.3 to 0.8 2 to 5 5 to 20
w mm
Sheet Resistance Rsq Ω 600 to 1500 300 to 500 200 to 600 80 to 200 50 to 150 60 to 100 40 to 120
Operating Temperature T K ~230
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PCI-2TE-4 X X X X
PCI-2TE-5 X X X X
PCI-2TE-6 X X X X
PCI-2TE-9 X X X X
PCI-2TE-10.6 X X X X
PCI-2TE-12 X X X X
PCI-2TE-13 X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 22
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 13 μm IR PHOTOCONDUCTORS
PCI-3TE Series THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PCI-3TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 13 μm spectral range The PCI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photoconductive detector on three-stage thermoelectrical cooler, optically
• Convenient to use immersed to high refractive index GaAs hyperhemispherical (standard) or
• Wide dynamic range hemispherical or any intermediate lens (as option) for different acceptance angle and
• Compact, rugged and reliable saturation level.
• Low cost The devices are optimized for the maximum performance at λopt. Cut-on wavelength is
• Prompt delivery limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Custom design upon request Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
performance and stability are achieved by application of variable gap (HgCd)Te
semiconductor, optimized doping and sophisticated surface processing.
Custom devices with quadrant cells, multielement arrays, different windows, lenses
and optical filters are available upon request.
Standard detectors are available in TO8 packages with wZnSeAR windows. Other
packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PCI-3TE-9 PCI-3TE-10.6 PCI-3TE-12 PCI-3TE-13
Optimal Wavelength*) λopt µm
Detectivity**):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥1.1×1010 ≥4.5×109 ≥1.6×109 ≥9.0×108
W
@ λopt, 20 kHz ≥6.0×109 ≥2.5×109 ≥9.0×108 ≥4.5×108
Voltage Responsivity - V⋅mm
Rv·w ≥150 ≥30 ≥10 ≥5
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤7 ≤5 ≤5 ≤4
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 3 to 5
w mm
Sheet Resistance Rsq Ω 60 to 200 40 to 160 40 to 150 60 to 100
Operating Temperature T K ~210
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PCI-3TE-9 X X X X
PCI-3TE-10.6 X X X X
PCI-3TE-12 X X X X
PCI-3TE-13 X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 23
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 14 μm IR PHOTOCONDUCTORS
PCI-4TE Series THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PCI-4TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 14 μm spectral range The PCI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photoconductive detector on four-stage thermoelectrical cooler, optically
• Convenient to use immersed to high refractive index GaAs hyperhemispherical (standard) or
• Wide dynamic range hemispherical or any intermediate lens (as option) for different acceptance angle and
• Compact, rugged and reliable saturation level.
• Low cost The devices are optimized for the maximum performance at λopt. Cut-on wavelength is
• Prompt delivery limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Custom design upon request Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
performance and stability are achieved by application of variable gap (HgCd)Te
semiconductor, optimized doping and sophisticated surface processing.
Custom devices with quadrant cells, multielement arrays, different windows, lenses
and optical filters are available upon request.
Standard detectors are available in TO8 packages with wZnSeAR windows. Other
packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PCI-4TE-9 PCI-4TE-10.6 PCI-4TE-12 PCI-4TE-13 PCI-4TE-14
Optimal Wavelength*) λopt µm 9 10.6 12 13 14
Detectivity**):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥2.0×1010 ≥8.0×109 ≥4.0×109 ≥2.0×109 ≥5.0×108
W
@ λopt, 20 kHz ≥1.0×1010 ≥4.0×109 ≥2.0×109 ≥1.0×109 ≥3.0×108
Voltage Responsivity - V⋅mm
Rv·w ≥200 ≥40 ≥15 ≥7 ≥5
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤8 ≤7 ≤6 ≤5
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 3 to 5
w mm
Sheet Resistance Rsq Ω 80 to 250 60 to 200 50 to 150
Operating Temperature T K ~195
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PCI-4TE-9 X X X X
PCI-4TE-10.6 X X X X
PCI-4TE-12 X X X X
PCI-4TE-13 X X X X
PCI-4TE-14 X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 24
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 - 11 μm IR PHOTOCONDUCTORS
PCQ Series
QUADRANT GEOMETRY

Example of D* vs Wavelength λ for PCQ Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PCQ-λopt (λopt - optimal wavelength in micrometers) series detectors are quadrant,
cm⋅√Hz high speed, ambient temperature IR photoconductive detectors.
• D* @10.6μm: ≥ 9.0×106
W The devices are optimized for the maximum performance at λ opt. Cut-on wavelength is
• Time constant of 1 ns or less limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.
• Perfect match to fast electronics Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest
• Convenient to use performance and stability are achieved by application of variable gap (HgCd)Te
• Wide dynamic range semiconductor, optimized doping and sophisticated surface processing.
• Low cost The detectors are well suited for broadband CO 2 laser detection due to a very short
• Prompt delivery time constant and perfect match to fast electronics.
• Custom design upon request Standard detectors are available in TO8 or specialized Quadrant (with four SMA
connectors) packages without windows.
Custom devices such as various sizes, configurations, connectors, windows and
optical filters are available upon request.

IR Detector Specification @20°C

Parameter Symbol Unit PCQ-10.6
Optimal Wavelength λopt µm 10.6
Detectivity*):
cm⋅√ Hz
@ λpeak, 20 kHz D* ≥2.5×107
W
@ λopt, 20 kHz ≥9.0×106
Voltage Responsivity - V⋅mm
Rv·w ≥0.1
Width Product @λopt, 1×1mm W
Time Constant τ ns ≤1
Corner Frequency 1/f kHz 1 to 20
Ib mA
Bias Current - Width Ratio 5 to 30
w mm
Sheet Resistance Rsq Ω 40 to 120
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - 60, 1
*)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PCQ-10.6 X X X X X X X X X
X – standard detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 25
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PEM Series 2 – 11 μm IR PHOTOELECTROMAGNETIC DETECTORS

Example of D* vs Wavelength λ for PEM Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PEM series detectors operate on the photoelectromagnetic effect in the
• No bias required semiconductors. The devices are typically optimized for the best performance at
• 2 to 11 μm spectral range 10.6 µm.
• Time constant of 1 ns or less The detector includes active element based on (HgCd)Te band gap engineered with
• No flocker noise selected composition and doping profiles, and miniature permanent magnets to
• Operation from DC to VHF produce a magnetic field.
• Lightweight, rugged and reliable The PEM detectors are well suited for heterodyne detection of 10.6 µm radiation.
• Convenient to use Exhibiting no flicker noise, they can be at the same time used for detection of CW and
• Low cost low frequency modulated radiation in the whole 2 to 11 µm spectral range.
• Custom design upon request Standard detectors are available in specialized PEM packages (with SMA connectors)
with wZnSeAR windows.
Custom devices such as single elements of various sizes, quadrant cells and
multielement arrays, various specialized packages and connectors are available upon
request.

IR Detector Specification @20°C

Parameter Symbol Unit PEM-10.6
Optimal Wavelength λopt µm 10.6
Detectivity*):
cm⋅√Hz
@ λpeak, 20 kHz D* ≥3.0×107
W
@ λopt, 20 kHz ≥1.0×107
Voltage Responsivity - V⋅mm
Rv·w ≥0.1
Width Product @λopt 1×1mm W
Time Constant τ ns ≤1
Resistance R Ω 40 to 100
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - 51, 1.16
*) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PEM-10.6 O O O O X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 26
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 11 μm IR PHOTOELECTROMAGNETIC DETECTORS
PEMI Series
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PEMI Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PEMI series detectors operate on the photoelectromagnetic effect in the
• No bias required
semiconductors, optically immersed to high refractive index hyperhemispherical
• 2 to 11 μm spectral range
(standard) or hemispherical (option) [Link] devices are typically optimized for the
• Time constant of 1 ns or less
best performance at 10.6 µm.
• No flocker noise
The detector includes active element based on (Hg,Cd)Te band gap engineered with
• Operation from DC to VHF
selected composition and doping profiles, and miniature permanent magnets to
• Lightweight, rugged and reliable
produce a magnetic field.
• Convenient to use
The PEMI detectors are well suited for heterodyne detection of 10.6 µm radiation.
• Low cost
Exhibiting no flicker noise, they can be at the same time used for detection of CW and
• Custom design upon request
low frequency modulated radiation in the whole 2 to 11 µm spectral range.
Standard detectors are available in specialized PEM packages (with SMA connectors)
with wZnSeAR windows.
Custom devices such as single elements of various sizes, quadrant cells and
multielement arrays, various specialized packages and connectors are available upon
request.

IR Detector Specification @20°C

Parameter Symbol Unit PEMI-10.6
Optimal Wavelength λopt µm 10.6
Detectivity*):
cm⋅√Hz
@ λpeak, 20 kHz D* ≥1.0x108
W
@ λopt, 20 kHz ≥5.0x107
Voltage Responsivity - V⋅mm
Rv·w ≥0.4
Width Product @λopt 1×1mm W
Time Constant τ ns ≤1
Resistance R Ω 40 to 100
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PEMI-10.6 O O X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 27
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PV Series 3 – 8 μm IR PHOTOVOLTAIC DETECTORS

Example of D* vs Wavelength λ for PV Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features The PV-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR
photovoltaic detector.
• Ambient temperature operation
This series is easy to use, no cooling or heatsink needed. The devices are optimized
• No bias required
for the maximum performance at λopt. Cut-on wavelength can be optimized upon
• Short time constant
request. Reverse bias may significantly increase speed of response and dynamic
• No flicker noise
range. It results also in improved performance at high frequencies, but 1/f noise that
• Operation from DC to VHF
appears in biased devices may reduce performance at low frequencies. Highest
• Perfect match to fast electronics
performance and stability are achieved by application of variable gap HgCdTe
• Wide dynamic range
semiconductor, optimized doping and sophisticated surface processing.
• Low cost
Standard detectors are available in TO39 or BNC packages without windows. Various
• Custom design upon request
windows, other packages and connectors are available upon request.

IR Detector Specification @20°C

Parameter Symbol Unit PV-3 PV-3.4 PV-4 PV-5 PV-6 PV-8
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8
Detectivity**):
cm⋅√Hz
@ λpeak D* ≥8.0×109 ≥7.0×109 ≥5.0×109 ≥2.0×109 ≥1.0×109 ≥8.0×107
W
@ λopt ≥6.5×109 ≥5.0×109 ≥3.0×109 ≥1.0×109 ≥5.0×108 ≥4.0×107
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1 ≥1 ≥0.3
W
Time Constant τ ns ≤350 ≤260 ≤150 ≤120 ≤80 ≤4
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.7 ≤0.7
Resistance –
R·A Ω·cm2 ≥1 ≥0.5 ≥0.1 ≥0.01 ≥0.002 ≥0.0001
Optical Area Product
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - >90, 0.71
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***)
Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PV-3 O X X O O O
PV-3.4 O X X O O O
PV-4 O X X O O O
PV-5 O X X O O O
PV-6 O X X**) O O
PV-8 X X**) P
*)
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 28
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 12 μm IR PHOTOVOLTAIC DETECTORS
PV-2TE Series
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PV-2TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 12 µm spectral range The PV-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photovoltaic detector on two-stage thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λopt. Cut-on wavelength
• Convenient to use can be optimized upon request. Reverse bias may significantly increase speed of
• Wide dynamic range response and dynamic range. It results also in improved performance at high
• Compact, rugged and reliable frequencies, but 1/f noise that appears in biased devices may reduce performance at
• Low cost low frequencies. Highest performance and stability are achieved by application of
• Prompt delivery variable gap HgCdTe semiconductor, optimized doping and sophisticated surface
• Custom design upon request processing. Custom devices with quadrant cells, multielement arrays, different
windows, lenses and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PV-2TE-3 PV-2TE-3.4 PV-2TE-4 PV-2TE-5 PV-2TE-6 PV-2TE-8 PV-2TE-10.6
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥1.0×1011 ≥6.0×1010 ≥4.0×1010 ≥1.5×1010 ≥5.0×109 ≥4.0×108 ≥2.0×108
W
@ λopt ≥7.0×1010 ≥4.0×1010 ≥3.0×1010 ≥9.0×109 ≥2.0×109 ≥2.0×108 ≥1.0×108
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥0.8 ≥0.4
W
Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4
Resistance –
R·A Ω·cm2 ≥150 ≥3 ≥2 ≥0.1 ≥0.02 ≥0.0002 ≥0.0001
Optical Area Product
Operating Temperature T K ~230
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PV-2TE-3 O X X O O O
PV-2TE-3.4 O X X O O O
PV-2TE-4 O X X O O O
PV-2TE-5 O X X O O O
PV-2TE-6 O X X**) O O
PV-2TE-8 X X**) P
PV-2TE-10.6 X X**) P
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
*)

**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 29
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 12 μm IR PHOTOVOLTAIC DETECTORS
PV-3TE Series
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PV-3TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to12 µm spectral range The PV-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photovoltaic detector on three-stage thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λopt. Cut-on wavelength
• Convenient to use can be optimized upon request. Reverse bias may significantly increase speed of
• Wide dynamic range response and dynamic range. It results also in improved performance at high
• Compact, rugged and reliable frequencies, but 1/f noise that appears in biased devices may reduce performance at
• Low cost low frequencies. Highest performance and stability are achieved by application of
• Prompt delivery variable gap HgCdTe semiconductor, optimized doping and sophisticated surface
• Custom design upon request processing. Custom devices with quadrant cells, multielement arrays, different
windows, lenses and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PV-3TE-3 PV-3TE-3.4 PV-3TE-4 PV-3TE-5 PV-3TE-6 PV-3TE-8 PV-3TE-10.6
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥3.0×1011 ≥9.0×1010 ≥6.0×1010 ≥4.0×1010 ≥7.0×109 ≥5.0×108 ≥3.0×108
W
@ λopt ≥1.0×1011 ≥7.0×1010 ≥4.0×1010 ≥1.0×1010 ≥4.0×109 ≥3.0×108 ≥1.5×108
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1 ≥0.7
W
Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4
Resistance –
R·A Ω·cm2 ≥240 ≥15 ≥6 ≥0.3 ≥0.025 ≥0.0004 ≥0.0002
Optical Area Product
Operating Temperature T K ~210
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PV-3TE-3 O X X O O O
PV-3TE-3.4 O X X O O O
PV-3TE-4 O X X O O O
PV-3TE-5 O X X O O O
PV-3TE-6 O X X O O O
PV-3TE-8 X X**) P
PV-3TE-10.6 X X**) P
*)
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 30
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 12 μm IR PHOTOVOLTAIC DETECTORS
PV-4TE Series
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PV-4TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 12 µm spectral range The PV-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photovoltaic detector on four-stage thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λopt. Cut-on wavelength
• Convenient to use can be optimized upon request. Reverse bias may significantly increase speed of
• Wide dynamic range response and dynamic range. It results also in improved performance at high
• Compact, rugged and reliable frequencies, but 1/f noise that appears in biased devices may reduce performance at
• Low cost low frequencies. Highest performance and stability are achieved by application of
• Prompt delivery variable gap HgCdTe semiconductor, optimized doping and sophisticated surface
• Custom design upon request processing. Custom devices with quadrant cells, multielement arrays, different
windows, lenses and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PV-4TE-3 PV-4TE-3.4 PV-4TE-4 PV-4TE-5 PV-4TE-6 PV-4TE-8 PV-4TE-10.6
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥3.0×1011 ≥2.0×1011 ≥1.0×1011 ≥4.0×1010 ≥9.0×109 ≥5.0×108 ≥4.0×108
W
@ λopt ≥1.5×1011 ≥1.0×1011 ≥6.0×1010 ≥1.5×1010 ≥5.0×109 ≥4.0×108 ≥2.0×108
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1.5 ≥0.7
W
Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4
Resistance –
R·A Ω·cm2 ≥300 ≥20 ≥8 ≥0.4 ≥0.03 ≥0.0006 ≥0.0005
Optical Area Product
Operating Temperature T K ~195
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PV-4TE-3 O X X O O O
PV-4TE-3.4 O X X O O O
PV-4TE-4 O X X O O O
PV-4TE-5 O X X O O O
PV-4TE-6 O X X O O O
PV-4TE-8 X X**) P
PV-4TE-10.6 X X**) P
*)
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 31
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 3 – 8 μm IR PHOTOVOLTAIC DETECTORS
PVI Series
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVI Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features The PVI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature
IR photovoltaic detector, optically immersed to high refractive index GaAs
• Ambient temperature operation
hyperhemispherical (standard) or hemispherical or any intermediate lens (as option)
• No bias required
for different acceptance angle and saturation level.
• Short time constant
This series is easy to use, no cooling or heatsink needed. The devices are optimized
• No flicker noise
for the maximum performance at λopt. Cut-on wavelength can be optimized upon
• Operation from DC to VHF
request. Reverse bias may significantly increase speed of response and dynamic
• Perfect match to fast electronics
range. It results also in improved performance at high frequencies, but 1/f noise that
• Wide dynamic range
appears in biased devices may reduce performance at low [Link]
• Low cost
performance and stability are achieved by application of variable gap HgCdTe
• Custom design upon request
semiconductor, optimized doping and sophisticated surface processing.
Standard detectors are available in TO39 or BNC packages without windows. Various
windows, other packages and connectors are available upon request.

IR Detector Specification @20°C

Parameter Symbol Unit PVI-3 PVI-3.4 PVI-4 PVI-5 PVI-6 PVI-8
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥5.0×1010 ≥5.0×1010 ≥3.0×1010 ≥1.5×1010 ≥8.0×109 ≥8.0×108
W
@ λopt ≥5.0×1010 ≥4.5×1010 ≥2.0×1010 ≥9.0×109 ≥4.0×109 ≥4.0×108
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1 ≥1 ≥0.3
W
Time Constant τ ns ≤350 ≤260 ≤150 ≤120 ≤80 ≤4
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.7
Resistance –
R·A Ω·cm2 ≥100 ≥50 ≥6 ≥1 ≥0.2 ≥0.01
Optical Area Product
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVI-3 O X X O
PVI-3.4 O X X O
PVI-4 O X X O
PVI-5 O X X O
PVI-6 O X X
PVI-8 X X X**) P
*)
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.

X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 32
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 12 μm IR PHOTOVOLTAIC DETECTORS
PVI-2TE Series THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVI-2TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 12 µm spectral range The PVI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photovoltaic detector on two-stage thermoelectrical cooler, optically
• No flicker noise immersed to high refractive index GaAs hyperhemispherical (standard) or
• Convenient to use hemispherical or any intermediate lens (as option) for different acceptance angle and
• Wide dynamic range saturation level.
• Compact, rugged and reliable The devices are optimized for the maximum performance at λopt. Cut-on wavelength
• Low cost can be optimized upon request. Reverse bias may significantly increase speed of
• Prompt delivery response and dynamic range. It results also in improved performance at high
• Custom design upon request frequencies, but 1/f noise that appears in biased devices may reduce performance at
low frequencies. Highest performance and stability are achieved by application of
variable gap HgCdTe semiconductor, optimized doping and sophisticated surface
processing. Custom devices with quadrant cells, multielement arrays, different
windows, lenses and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVI-2TE-3 PVI-2TE-3.4 PVI-2TE-4 PVI-2TE-5 PVI-2TE-6 PVI-2TE-8 PVI-2TE-10.6
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6
Detectivity**):
cm⋅√Hz
@ λpeak D* ≥8.0×1011 ≥6.0×1011 ≥3.0×1011 ≥1.0×1011 ≥5.0×1010 ≥4.0×109 ≥2.0×109
W
@ λopt ≥5.5×1011 ≥3.0×1011 ≥2.0×1011 ≥6.0×1010 ≥2.0×1010 ≥2.0×109 ≥1.0×109
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥0.8 ≥0.4
W
Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4
Resistance –
R·A Ω·cm2 ≥15000 ≥300 ≥200 ≥10 ≥2 ≥0.002 ≥0.01
Optical Area Product
Operating Temperature T K ~230
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVI-2TE-3 O X X O
PVI-2TE-3.4 O X X O
PVI-2TE-4 O X X O
PVI-2TE-5 O X X O
PVI-2TE-6 O X X
PVI-2TE-8 X X**) P
PVI-2TE-10.6 X X**) P
*)
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 33
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 12 μm IR PHOTOVOLTAIC DETECTORS
PVI-3TE Series THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVI-3TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 12 µm spectral range The PVI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR photovoltaic detector on three-stage thermoelectrical cooler, optically
• No flicker noise immersed to high refractive index GaAs hyperhemispherical (standard) or
• Convenient to use hemispherical or any intermediate lens (as option) for different acceptance angle and
• Wide dynamic range saturation level.
• Compact, rugged and reliable The devices are optimized for the maximum performance at λopt. Cut-on wavelength
• Low cost can be optimized upon request. Reverse bias may significantly increase speed of
• Prompt delivery response and dynamic range. It results also in improved performance at high
• Custom design upon request frequencies, but 1/f noise that appears in biased devices may reduce performance at
low frequencies. Highest performance and stability are achieved by application of
variable gap HgCdTe semiconductor, optimized doping and sophisticated surface
processing. Custom devices with quadrant cells, multielement arrays, different
windows, lenses and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVI-3TE-3 PVI-3TE-3.4 PVI-3TE-4 PVI-3TE-5 PVI-3TE-6 PVI-3TE-8 PVI-3TE-10.6
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6
Detectivity**):
cm⋅√Hz
@ λpeak D* ≥9.0×1011 ≥7.0×1011 ≥5.0×1011 ≥1.0×1011 ≥6.0×1010 ≥5.0×109 ≥3.0×109
W
@ λopt ≥7.0×1011 ≥5.0×1011 ≥3.0×1011 ≥8.0×1010 ≥3.0×1010 ≥3.0×109 ≥1.5×109
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1 ≥0.7
W
Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4
Resistance –
R·A Ω·cm2 ≥24000 ≥1500 ≥600 ≥30 ≥2.5 ≥0.04 ≥0.02
Optical Area Product
Operating Temperature T K ~210
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVI-3TE-3 O X X O
PVI-3TE-3.4 O X X O
PVI-3TE-4 O X X O
PVI-3TE-5 O X X O
PVI-3TE-6 O X X
PVI-3TE-8 X X**) P
PVI-3TE-10.6 X X**) P
*)
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 34
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 2 – 12 μm IR PHOTOVOLTAIC DETECTORS
PVI-4TE Series THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVI-4TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 2 to 12 µm spectral range The PVI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature four-stage thermoelectrical cooler IR phptpvoltaic detector, optically immersed
• No flicker noise to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any
• Convenient to use intermediate lens (as option) for different acceptance angle and saturation level.
• Wide dynamic range The devices are optimized for the maximum performance at λopt. Cut-on wavelength
• Compact, rugged and reliable can be optimized upon request. Reverse bias may significantly increase speed of
• Low cost response and dynamic range. It results also in improved performance at high
• Prompt delivery frequencies, but 1/f noise that appears in biased devices may reduce performance at
• Custom design upon request low frequencies. Highest performance and stability are achieved by application of
variable gap HgCdTe semiconductor, optimized doping and sophisticated surface
processing. Custom devices with quadrant cells, multielement arrays, different
windows, lenses and optical filters are available upon request.
Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.
Other packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVI-4TE-3 PVI-4TE-3.4 PVI-4TE-4 PVI-4TE-5 PVI-4TE-6 PVI-4TE-8 PVI-4TE-10.6
Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥1.0×1012 ≥8.0×1011 ≥6.0×1011 ≥3.0×1011 ≥6.0×1010 ≥5.0×109 ≥4.0×109
W
@ λopt ≥8.0×1011 ≥7.0×1011 ≥4.0×1011 ≥1.0×1011 ≥4.0×1010 ≥4.0×109 ≥2.0×109
A
Current Responsivity Ri ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1.5 ≥0.7
W
Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10
Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4
Resistance –
R·A Ω·cm2 ≥30000 ≥2000 ≥800 ≥40 ≥3 ≥0.06 ≥0.05
Optical Area Product
Operating Temperature T K ~195
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

Optical Area*) [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVI-4TE-3 O X X O
PVI-4TE-3.4 O X X O
PVI-4TE-4 O X X O
PVI-4TE-5 O X X O
PVI-4TE-6 O X X
PVI-4TE-8 X X**) P
PVI-4TE-10.6 X X**) P
Circular shaped Optical Area (Diameter [mm]) can be provided upon request.
*)

**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.
X – standard detectors
P – default with reverse bias
O – detectors available upon request; parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 35
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 8 – 11 μm IR PHOTOVOLTAIC
PVM Series
MULTIPLE JUNCTION DETECTORS

Example of D* vs Wavelength λ for PVM Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PVM-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature
• No bias required IR multiple junction photovoltaic detector.
• Short time constant The devices are optimized for the maximum performance at λ opt. Highest performance
• No flocker noise and stability are achieved by application of variable gap HgCdTe semiconductor,
• Operation from DC to VHF optimized doping and sophisticated surface processing.
• Perfect match to fast electronics Standard detectors are available in TO39 or BNC packages without windows. Various
• Wide dynamic range windows, other packages and connectors are available upon request.
• Large area devices
• Low cost
• Prompt delivery
• Custom design upon request

IR Detector Specification @20°C

Parameter Symbol Unit PVM-8 PVM-10.6
Optimal Wavelength*) λopt µm 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥1.2×108 ≥2.0×107
W
@ λopt ≥6.0×107 ≥1.0×107
Current Responsivity - A⋅mm
Ri·w ≥0.008 ≥0.002
Width Product @λopt 1×1mm W
Time Constant τ ns ≤4 ≤1.5
Resistance R Ω 50 to 300 20 to 150
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - >90, 0.71
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVM-8 O O X X O O X X X X
PVM-10.6 O O X X O O X X X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 36
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 8 – 11 μm IR PHOTOVOLTAIC
PVM-2TE Series MULTIPLE JUNCTION DETECTORS
THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PVM-2TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the 8 to 11 µm spectral range The PVM-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
• Fast response feature IR multiple junction photovoltaic detector on two-stage thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λopt, large area devices.
• Convenient to use Highest performance and stability are achieved by application of variable gap HgCdTe
• Wide dynamic range semiconductor, optimized doping and sophisticated surface processing. Custom
• Compact, rugged and reliable devices with quadrant cells, multielement arrays, different windows, lenses and optical
• Low cost filters are available upon request.
• Prompt delivery Standard detectors are available in TO8 packages with wZnSeAR windows. Other
• Custom design upon request packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVM-2TE-8 PVM-2TE-10.6
Optimal Wavelength*) λopt µm 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥6.0×108 ≥2.0×108
W
@ λopt ≥3.0×108 ≥1.0×108
Current Responsivity - A⋅mm
Ri·w ≥0.015 ≥0.006
Width Product @λopt 1×1mm W
Time Constant τ ns ≤4 ≤3
Resistance R Ω 150 to 600 100 to 350
Operating Temperature T K ~230
Acceptance Angle, F/# Φ, - deg, - 70, 0.87
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVM-2TE-8 O O X X O O X X X
PVM-2TE-10.6 O O X X O O X X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 37
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 8 – 11 μm IR PHOTOVOLTAIC
PVMI Series MULTIPLE JUNCTION DETECTORS
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVMI Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• Ambient temperature operation The PVMI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature
• No bias required IR multiple junction optically immersed photovoltaic detector.
• Short time constant The devices are optimized for the maximum performance at λ opt. Highest performance
• No flocker noise and stability are achieved by application of variable gap HgCdTe semiconductor,
• Operation from DC to VHF optimized doping and sophisticated surface processing.
• Perfect match to fast electronics Standard detectors are available in TO39 or BNC packages without windows. Various
• Wide dynamic range windows, other packages and connectors are available upon request.
• Low cost
• Custom design upon request

IR Detector Specification @20°C

Parameter Symbol Unit PVMI-8 PVMI-10.6
Optimal Wavelength*) λopt µm 8 10.6
Detectivity**):
cm⋅√Hz
@ λpeak D* ≥6.0×108 ≥2.0×108
W
@ λopt ≥3.0×108 ≥1.0×108
Current Responsivity - A⋅mm
Ri·w ≥0.04 ≥0.01
Width Product @λopt 1×1mm W
Time Constant τ ns ≤4 ≤1.5
Resistance R Ω 50 to 300 20 to 150
Operating Temperature T K ~300
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVMI-8 O O X X
PVMI-10.6 O O X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 38
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 8 – 11 μm IR PHOTOVOLTAIC
MULTIPLE JUNCTION DETECTORS
PVMI-2TE Series
THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVMI-2TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the long wavelengths range without The PVMI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
LN cooling feature IR multiple junction optically immersed photovoltaic detectors on two-stage
• Fast response thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λ opt. Highest performance
• Convenient to use and stability are achieved by application of variable gap HgCdTe semiconductor,
• Wide dynamic range optimized doping and sophisticated surface processing. Custom devices with quadrant
• Compact, rugged and reliable cells, multielement arrays, different windows, lenses and optical filters are available
• Low cost upon request.
• Prompt delivery Standard detectors are available in TO8 packages with wZnSeAR windows. Other
• Custom design upon request packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVMI-2TE-8 PVMI-2TE-10.6
Optimal Wavelength*) λopt µm 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥2.5×109 ≥1.5×109
W
@ λopt ≥2.0×109 ≥1.0×109
Current Responsivity - A⋅mm
Ri·w ≥0.10 ≥0.05
Width Product @λopt 1×1mm W
Time Constant τ ns ≤4 ≤3
Resistance R Ω 150 to 600 100 to 350
Operating Temperature T K ~230
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVMI-2TE-8 O O X X
PVMI-2TE-10.6 O O X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 39
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 8 – 11 μm IR PHOTOVOLTAIC
MULTIPLE JUNCTION DETECTORS
PVMI-3TE Series
THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVMI-3TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the long wavelengths range without The PVMI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
LN cooling feature IR multiple junction optically immersed photovoltaic detectors on three-stage
• Fast response thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λ opt. Highest performance
• Convenient to use and stability are achieved by application of variable gap HgCdTe semiconductor,
• Wide dynamic range optimized doping and sophisticated surface processing. Custom devices with quadrant
• Compact, rugged and reliable cells, multielement arrays, different windows, lenses and optical filters are available
• Low cost upon request.
• Prompt delivery Standard detectors are available in TO8 packages with wZnSeAR windows. Other
• Custom design upon request packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVMI-3TE-8 PVMI-3TE-10.6
Optimal Wavelength*) λopt µm 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥4.0×109 ≥2.0×109
W
@ λopt ≥3.0×109 ≥1.5×109
Current Responsivity - A⋅mm
Ri·w ≥0.15 ≥0.10
Width Product @λopt 1×1mm W
Time Constant τ ns ≤4 ≤3
Resistance R Ω 200 to 1200 100 to 400
Operating Temperature T K ~210
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVMI-3TE-8 O O X X
PVMI-3TE-10.6 O O X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 40
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 8 – 11 μm IR PHOTOVOLTAIC
MULTIPLE JUNCTION DETECTORS
PVMI-4TE Series
THERMOELECTRICALLY COOLED
OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVMI-4TE Series HgCdTe Detectors. Spectral Characteristics

of individual detectors may vary from those shown on the chart.

Features Description
• High performance in the long wavelengths range without The PVMI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)
LN cooling feature IR multiple junction optically immersed photovoltaic detectors on four-stage
• Fast response thermoelectrical cooler.
• No flicker noise The devices are optimized for the maximum performance at λ opt. Highest performance
• Convenient to use and stability are achieved by application of variable gap HgCdTe semiconductor,
• Wide dynamic range optimized doping and sophisticated surface processing. Custom devices with quadrant
• Compact, rugged and reliable cells, multielement arrays, different windows, lenses and optical filters are available
• Low cost upon request.
• Prompt delivery Standard detectors are available in TO8 packages with wZnSeAR windows. Other
• Custom design upon request packages, windows and connectors are also available.

IR Detector Specification @20°C

Parameter Symbol Unit PVMI-4TE-8 PVMI-4TE-10.6
Optimal Wavelength*) λopt µm 8 10.6
Detectivity**):
cm⋅√ Hz
@ λpeak D* ≥8.0×109 ≥2.5×109
W
@ λopt ≥6.0×109 ≥2.0×109
Current Responsivity - A⋅mm
Ri·w ≥0.20 ≥0.15
Width Product @λopt 1×1mm W
Time Constant τ ns ≤4 ≤3
Resistance R Ω 500 to 1200 150 to 500
Operating Temperature T K ~195
Acceptance Angle, F/# Φ, - deg, - 36, 1.62
*)
Other Optimal Wavelengths available upon request.
**)
Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

Optical Area [mm×mm]

Type
0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4
PVMI-4TE-8 O O X X
PVMI-4TE-10.6 O O X X
X – standard detectors
O – detectors available upon request, parameters may vary from these in Data Sheet

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 41
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 INFRARED DETECTORS
ACCESSORIES

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 42
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 VIP FIP BIP MIP PIP SIP QIP

Preamplifier Series

STANDARD
Application standalone fast OEM STANDARD ultra small four channel
programmable
Size large medium medium medium medium small medium
Speed slow fast medium medium medium medium medium
Integrated Detector ✘ ✔ ✔ ✔ ✔ ✔ ✔
Cooled / Uncooled Detector ✘/✔ ✔/✔ ✔/✔ ✔/✔ ✔/✔ ✔/✔ ✘/✔
4 channel ✘ ✘ ✘ ✘ ✘ ✘ ✔
Tuned Gain ✘ ✘ ✘ ✘ ✔ option option
Programmable Gain ✘ ✘ ✘ ✘ ✔ ✘ ✘
Programmable Bandwidth ✘ ✘ ✘ ✘ ✔ ✘ ✘
Additonal DC Output ✘ option on request on request ✘ ✘ ✘
Page 44 47 51 55 59 63 67

TEC Controllers
STCC-04 ✘ ✔ ✔ ✔ ✘ ✔ ✘
MTCC-01 ✘ ✔ ✔ ✔ ✘ ✔ ✘
PTCC-01 ✘ ✔ ✔ ✔ ✔ ✔ ✘
Power Supplies
PPS-02 ✔ ✘ ✘ ✘ ✘ ✔ ✔
PPS-03 ✔ ✘ ✘ ✘ ✘ ✔ ✔
MPPS-01 ✔ ✔ ✔ ✔ ✘ ✔ ✔
Cables
BNC-BNC ✔ ✘ ✘ ✘ ✘ ✘ ✘
SMA-BNC ✘ ✔ ✔ ✔ ✔ ✘ ✘
SMA-SMA ✘ ✔ ✔ ✔ ✔ ✘ ✘
MMCX-BNC ✘ ✘ ✘ ✘ ✘ ✔ ✘
MMCX-SMA ✘ ✘ ✘ ✘ ✘ ✔ ✘
MCX-BNC ✘ ✘ ✘ ✘ ✘ ✘ ✔
MCX-SMA ✘ ✘ ✘ ✘ ✘ ✘ ✔
AMP2x4-DB9 ✘ ✘ ✔ ✘ ✘ ✔ ✔
AMP2x4-DUBOX2x5 ✘ ✘ ✔ ✘ ✘ ✔ ✘
AMP2x4-AMP2x4 ✘ ✘ ✔ ✘ ✘ ✔ ✘
LEMO-DB9 ✘ ✔ ✘ ✔ ✔ ✘ ✘
LEMO-DUBOX2x5 ✘ ✔ ✘ ✔ ✔ ✘ ✘
LEMO-AMP2X4 ✘ ✔ ✘ ✔ ✘ ✘ ✘
AMP1x6-MIC5 ✘ ✔ ✔ ✔ ✘ ✔ ✘
AMP1x6-POWER ✘ ✔ ✔ ✔ ✘ ✔ ✘
DB9-DB9 ✔ ✘ ✘ ✘ ✘ ✘ ✘
DB9-4mmPLUGS ✔ ✘ ✘ ✘ ✘ ✘ ✘
DB9-MIC5 ✔ ✘ ✘ ✘ ✘ ✘ ✘
AMP2x4-MIC5 ✘ ✘ ✘ ✘ ✘ ✔ ✔
KK2-POWER ✘ ✔ ✔ ✔ ✔ ✔ ✘
USB:TypeA-MicroB ✘ ✔ ✔ ✔ ✔ ✔ ✘
Power Cable EU ✔ ✔ ✔ ✔ ✘ ✔ ✘
Power Cable UK ✔ ✔ ✔ ✔ ✘ ✔ ✘
Power Cable US ✔ ✔ ✔ ✔ ✘ ✔ ✘
AC Adaptors
AC Adaptor ✔ ✔ ✔ ✔ ✔ ✔ ✔
Mechanical Accessories
DRB-1 ✔ ✔ ✘ ✔ ✔ ✘ ✔
DRB-2 ✔ ✔ ✘ ✔ ✔ ✘ ✔
MP ✔ ✔ ✘ ✔ ✔ ✘ ✔
PH ✔ ✔ ✘ ✔ ✔ ✘ ✔
BP ✔ ✔ ✘ ✔ ✔ ✘ ✔
STA-8x1-4 ✔ ✔ ✘ ✔ ✔ ✘ ✔
MHS-1 ✘ ✘ ✔ ✘ ✘ ✘ ✘
MHS-2 ✘ ✘ ✘ ✘ ✘ ✔ ✘
MHS-3 ✘ ✘ ✘ ✘ ✘ ✘ ✔
DH-BNC-1 ✔ ✘ ✘ ✘ ✘ ✘ ✘
DH-BNC-2 ✔ ✘ ✘ ✘ ✘ ✘ ✘
EL-1 ✘ ✘ ✘ ✔ ✔ ✘ ✘

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 43
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 VIP Series STANDALONE PREAMPLIFIER

Features
• Compact size
• High signal-to-noise ratio
• Bandwidth up to 20 MHz
• Dedicated to operate with uncooled detector in BNC package
• Custom configurations upon request
• Additional accessories available

Applications
• Contactless temperature measurement
• Laser radiation detection
• Gas analysis
• Fourier spectroscopy
Description • Fire, flame and human body detection
• Pyrometers, scanners
VIP is the transimpedance, AC or DC coupled, standalone preamplifier. • Nondestructive material testing
It is dedicated for operation with uncooled, no biasing IR detectors in
BNC packages.

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 0.97 – 8.01) fo = 100 kHz2)
√Hz
pA
Input Noise Current Density in 0.02 – 3.51) fo = 100 kHz2)
√Hz
DC DC coupling set
Low Cut-Off Frequency flo Hz
10 to 10k AC coupling set
High Cut-Off Frequency fhi Hz 100k to 20M
V
Transimpedance Ki
A
up to 1×105

Output Impedance Rout Ω 50

±10 fhi ≤ 1 MHz, RL = 1 MΩ3)
Output Voltage Swing Vout V ±2 1 MHz < fhi ≤ 20 MHz, RL = 1 MΩ3)
±1 20 MHz < fhi ≤ 250 MHz, RL = 50 Ω3)
Output Voltage Offset Voff mV ≤20 DC and AC coupling set
±15 fhi ≤ 1 MHz
Power Supply Voltage Vsup V
±9 1 MHz < fhi ≤ 20 MHz
Power Supply Current Isup mA ±25
Dimensions - mm×mm×mm 50×104×23.5 width×depth×height
Weight - g 260
Electrical characteristics @ Ta = 20 °C.
1)
The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
RL – load resistance

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 44
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
VIP Series

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
VIP-flo-fhi-P1
Detector Type Description
P1 – supply connector:
S – standard PV photovoltaic
H – pigtail cable
PVI photovoltaic, optically immersed
fhi – high cut-off frequency in Hz: PVM multiple heterojunction photovoltaic
100k, 300k, 1M, 5M, 10M, 20M
flo – low cut-off frequency in Hz: PVMI
multiple heterojunction photovoltaic,
optically immersed
DC, 10, 100, 1k, 10k
VIP – preamplifier series
V – Version, I – Current Input,
P – Preamplifier
Schematic Diagram

Supply EMI DB9

Regulator Filters Supply Connector

Transimpedance Voltage BNC

From Detector Unit
Preamplifier Amplifier Output Connector

Power Supply Connector DB9 Connector Male

Pin Number Symbol Function
1 N.C. not connected
2 N.C. not connected
1 2 3 4 5
3 GND power ground
4 N.C. not connected 6 7 8 9
5 N.C. not connected
6 –Vsup power supply input (–)
7 N.C. not connected
8 N.C. not connected
9 +Vsup power supply input (+)

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St. 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 45
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
VIP Series

Recommended Accessories
PPS-02 PPS-03 MPPS-01 BNC-BNC DB9-DB9

Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal Input or Output Cable Preamplifier Supply Cable

DB9-4mmPLUGS DB9-MIC5 AC Adaptor Power Cable EU Power Cable UK

Preamplifier Supply Cable Preamplifier Supply Cable Power Supply Adaptor Power Cable Power Cable

Power Cable US DRB-1 DRB-2 MP PH

Power Cable Base Mounting System Base Mounting System Mounting Post Post Holder

STA-8x1-4 DH-BNC-1

Special Thread Adapter Detector's Holder

VIGO System S.A. 129/133 Poznanska St. 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 46
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 FIP Series FAST PREAMPLIFIER

Features
• Compact size
• Wide bandwidth up to 1GHz
• Precise I-V conversion
• Detector biasing possibility up to +800 mV
• Low current noise
• Co-operation with high-resistance detectors
• Effective cooling up to 4-stage TE coolers

Applications
• Laser technology
• Fast laser pulse measurements
• Telemetry
• Sighting systems
• Free space optics
Description
FIP is the high speed transimpedance, AC coupled preamplifier. It is
dedicated for high speed infrared measurements.
FIP preamplifier is designed for operation with either biased or non-
biased TE cooled detectors.

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 1.11) fo = 100 kHz2)
√Hz
pA
Input Noise Current Density in 51) fo = 100 kHz2)
√Hz
Low Cut-Off Frequency flo Hz 1k, 10k 3 dB

High Cut-Off Frequency fhi Hz 1G 3 dB

V
Transimpedance Ki
A
8.5×103

Output Impedance Rout Ω 50

Output Voltage Swing Vout V ±0.8 RL = 50 Ω3)

+12
Power Supply Voltage Vsup V
-5
+100
Power Supply Current Isup mA
-50
no detector biasing
45×89.5×48.5 width×depth×height - with 2TE
Dimensions - mm×mm×mm 45×91×48.5 width×depth×height - with 3TE
45×92.5×48.5 width×depth×height - with 4TE
Electrical characteristics @ Ta = 20 °C.
1)
The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
RL – load resistance

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 47
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
FIP Series

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
FIP-flo-fhi-P1-P2-P3
Detector Type Description
P3 – additional DC output:
D – with output PC-2TE, PC-3TE, PC-4TE photoconductive
ND – no DC output
PCI, PCI-2TE, PCI-3TE, photoconductive,
P2 – mounting hole: PCI-4TE optically immersed
M4 – M4 mounting hole PV-2TE, PV-3TE, PV-4TE photovoltaic
M8 – M8x1 mounting hole
P1 – package: PVI-2TE, PVI-3TE, PVI-4TE
photovoltaic,
optically immersed
F – with fan
multiple heterojunction
fhi – high cut-off frequency in Hz: PVM-2TE, PVM-3TE, PVM-4TE
photovoltaic
1G
multiple heterojunction
flo – low cut-off frequency in Hz: PVMI-2TE, PVMI-3TE,
PVMI-4TE
photovoltaic,
available options: 1k,10k optically immersed

FIP – preamplifier series Symbol -2TE, -3TE, -4TE means 2, 3 or 4-stage TEC integrated with detector.

F – Version, I – Current Input,

P – Preamplifier

Schematic Diagram

LEMO
Detector Supply EMI
Supply & Control
Biasing2) Regulator Filters
Connector
Thermistor1) DATA
Configuration
Memory

IR Sensitive
Area Transimpedance Voltage SMA Output
Preamplifier Amplifier Connector

Detector Unit TE-Cooler1)

1)
, Only for TE-cooled detectors
2)
Only for biased detectors

Power Supply and TEC Control Connector LEMO Connector Female

Pin number Symbol Function
1 FAN+ FAN (+)
5
2 TH2 thermistor output (2) 6 4
3 TEC– TEC supply input (–)
7 9 3
4 –Vsup power supply input (–)
5 GND power ground 2
8
6 +Vsup power supply input (+) 1
7 TEC+ TEC supply input (+)
8 TH1 thermistor output (1)
9 DATA data pin

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 48
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
FIP Series

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 49
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
FIP Series

Recommended Accessories
PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV STCC-04 MTCC-01

Programmable “Smart” TEC Programmable “Smart” TEC Programmable “Smart” TEC

Standard TEC Controller Miniature TEC Controller
Controller – OEM Controller – Basic Controller – Advanced

MPPS-01 SMA-BNC SMA-SMA LEMO-DB9 LEMO-DUBOX2x5

Preamplifier Power Supply Signal Output Cable Signal Output Cable TEC and Supply Cable TEC and Supply Cable

LEMO-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER KK2-POWER USB: TypeA-MicroB

TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection

AC Adaptor Power Cable EU Power Cable UK Power Cable US DRB-1

Power Supply Adaptor Power Cable Power Cable Power Cable Base Mounting System

DRB-2 MP PH STA-8x1-4

Base Mounting System Mounting Post Post Holder Special Thread Adapter

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 50
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 BIP Series OEM PREAMPLIFIER

Features
• Compact size
• High signal-to-noise ratio
• Bandwidth up to 250 MHz
• Dedicated to operate with 2-, 3- and 4-stage TE cooled detectors
• Custom modifications upon request
• Additional accessories available

Applications
• Contactless temperature measurement
• Free space optical communication
• Laser radiation detection
• Gas analysis
• Fourier spectroscopy
• Fire, flame and human body detection
• Pyrometers, scanners
• Nondestructive material testing
Description • OEM applications
BIP is the transimpedance, AC or DC coupled preamplifier. It is
dedicated for OEM applications and requires external heat sink (see
Recommended Accessories).
BIP preamplifier is designed for operation with either biased or
non-biased TE cooled detectors.

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 0.97 – 8.01) fo = 10 kHz2)
√ Hz
pA
Input Noise Current Density in 0.02 – 3.51) fo = 10 kHz2)
√ Hz
DC DC coupling set
Low Cut-Off Frequency flo Hz
10 to 10k AC coupling set
High Cut-Off Frequency fhi Hz 100k to 250M
V
Transimpedance Ki
A
up to 2×105

Output Impedance Rout Ω 50

±10 fhi ≤ 1 MHz, RL = 1 MΩ3)
Output Voltage Swing Vout V ±2 1 MHz < fhi ≤ 20 MHz, RL = 1 MΩ3)
±1 20 MHz < fhi ≤ 250 MHz, RL = 50 Ω3)
Output Voltage Offset Voff mV max ±204)
±15 fhi ≤ 1 MHz
Power Supply Voltage Vsup V
±9 fhi > 1 MHz
Power Supply Current Isup mA max ±50 no detector biasing
Dimensions - mm×mm×mm 45×80.5×25 width×depth×height - with 2TE, 3TE, 4TE
Electrical characteristics @ Ta = 20 °C.
1)
The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
RL – load resistance
4)
Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 51
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
BIP Series

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
BIP-flo-fhi
Detector Type Description
fhi – high cut-off frequency in Hz: PC-2TE, PC-3TE, PC-4TE photoconductive
100k, 300k, 1M, 5M, 10M, 20M, 50M, 100M, 250M photoconductive,
PCI-2TE, PCI-3TE, PCI-4TE
flo – low cut-off frequency in Hz: optically immersed

DC, 10, 100, 1k, 10k PV-2TE, PV-3TE, PV-4TE photovoltaic

BIP – preamplifier series: PVI-2TE, PVI-3TE, PVI-4TE

photovoltaic,
B- Version, I – Current Input, P – Preamplifier optically immersed
multiple heterojunction
PVM-2TE, PVM-3TE, PVM-4TE
photovoltaic
multiple heterojunction
PVMI-2TE, PVMI-3TE,
photovoltaic,
PVMI-4TE
optically immersed
Symbol -2TE, -3TE, -4TE means 2, 3 or 4-stage TEC integrated with detector.

Schematic Diagram

AMP2x4
Detector Supply EMI
Supply & Control
Biasing2) Regulator Filters
Connector
Thermistor1) DATA
Configuration
Memory

IR Sensitive
Area Transimpedance Voltage SMAOutput
Preamplifier Amplifier Connector

Detector Unit TE-Cooler1)

1)
, Only for TE-cooled detectors
2)
Only for biased detectors

Power Supply and TEC Control Connector AMP2x4 Connector Male

Pin Number Symbol Function
1 –Vsup power supply input (–)
2 TH2 thermistor output (2)
3 DATA data pin 2 4 6 8
4 TEC– TEC supply input (–)
5 GND power ground 1 3 5 7
6 TH1 thermistor output (1)
7 +Vsup power supply input (+)

8 TEC+ TEC supply input (+)

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 52
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
BIP Series

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 53
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
BIP Series

Recommended Accessories
PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV STCC-04 MTCC-01

Programmable “Smart” TEC Programmable “Smart” TEC Programmable “Smart” TEC

Standard TEC Controller Miniature TEC Controller
Controller – OEM Controller – Basic Controller – Advanced

MPPS-01 SMA-BNC SMA-SMA AMP2x4-DB9 AMP2x4-DUBOX2x5

Preamplifier Power Supply Signal Output Cable Signal Output Cable TEC and Supply Cable TEC and Supply Cable

AMP2x4-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER KK2-POWER USB: TypeA-MicroB

TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection

AC Adaptor Power Cable EU Power Cable UK Power Cable US MHS-1

Power Supply Adaptor Power Cable Power Cable Power Cable Additional Heat Sink

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 54
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 MIP Series MEDIUM SIZE PREAMPLIFIER

Features
• Compact size
• High signal-to-noise ratio
• Bandwidth up to 250 MHz
• Dedicated for operation with 2-, 3- and 4-stage TE cooled detectors
• Custom configuration upon request
• Additional accessories available

Applications
• Contactless temperature measurement
• Free space optical communication
• Laser radiation detection
• Gas analysis
• Fourier spectroscopy
• Fire, flame and human body detection
• Pyrometers, scanners
• Nondestructive material testing
• OEM applications

Description
MIP is the transimpedance, AC or DC coupled preamplifier. It is
dedicated for BenchTop applications. Package type F is equipped with
fan and does not require additonal heat sink. Pacakage type NF requires
additional heat dissipation (provided by user).
MIP preamplifier is designed for operation with either biased or non-
biased cooled detectors.

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 0.97 – 8.0 1)
fo = 10 kHz2)
√Hz
pA
Input Noise Current Density in 0.02 – 3.51) fo = 10 kHz2)
√Hz
DC DC coupling set
Low Cut-Off Frequency flo Hz
10 to 10k AC coupling set
High Cut-Off Frequency fhi Hz 100k to 250M
V
Transimpedance Ki
A
up to 2×105

Output Impedance Rout Ω 50

±10 fhi ≤ 1 MHz, RL = 1 MΩ3)
Output Voltage Swing Vout V ±2 1 MHz < fhi ≤ 20 MHz, RL = 1 MΩ3)
±1 20 MHz < fhi ≤ 250 MHz, RL = 50 Ω3)
Output Voltage Offset Voff mV max ±204)
±15 fhi ≤ 1 MHz
Power Supply Voltage Vsup V
±9 fhi > 1 MHz
Power Supply Current Isup mA max ±50 no detector biasing
40×81.3×40 width×depth×height - with 2TE
40×82.8×40 width×depth×height - with 3TE MIP package F
40×84.3×40 width×depth×height - with 4TE
Dimensions - mm×mm×mm
40×55.5×40 width×depth×height - with 2TE
40×57×40 width×depth×height - with 3TE MIP package NF
40×58.5×40 width×depth×height - with 4TE
Electrical characteristics @ Ta = 20 ºC.
1)
The preamplifier noise may significantly reduce the system performance in some [Link] happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
RL – load resistance
4)
Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 55
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
MIP Series

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
MIP-flo-fhi-P1-P2
Detector Type Description
P2 – mounting hole:
M4 – M4 mounting hole PC-2TE, PC-3TE, PC-4TE photoconductive
M8 – M8x1 mounting hole photoconductive,
PCI-2TE, PCI-3TE, PCI-4TE
P1 – package: optically immersed
F – with fan PV-2TE, PV-3TE, PV-4TE photovoltaic
NF – without fan
photovoltaic,
fhi – high cut-off frequency in Hz: PVI-2TE, PVI-3TE, PVI-4TE
optically immersed
100k, 300k,
1M, 5M, 10M, 20M, 50M, 100M, 250M multiple heterojunction
PVM-2TE, PVM-3TE, PVM-4TE
photovoltaic
flo – low cut-off frequency in Hz:
multiple heterojunction
DC, 10, 100, 1k, 10k PVMI-2TE, PVMI-3TE,
photovoltaic,
PVMI-4TE
MIP – preamplifier series optically immersed
M – Version, I – Current Input, Symbol -2TE, -3TE, -4TE means 2-, 3- or 4-stage TEC integrated with detector.
P – Preamplifier

Schematic Diagram

LEMO
Detector Supply EMI
Supply & Control
Biasing2) Regulator Filters
Connector
Thermistor1) DATA
Configuration
Memory

IR Sensitive
Area Transimpedance Voltage SMA Output
Preamplifier Amplifier Connector

Detector Unit TE-Cooler1)

1)
, Only for TE-cooled detectors
2)
Only for biased detectors

Power Supply and TEC Control Connector LEMO Connector Female

Pin Number Symbol Function
1*) FAN+/GND FAN (+)/power ground 5
2 TH2 thermistor output (2) 6 4
3 TEC– TEC supply input (–)
7 9 3
4 –Vsup power supply input (–)
5 GND power ground 8 2
1
6 +Vsup power supply input (+)
7 TEC+ TEC supply input (+)
8 TH1 thermistor output (1)
9 DATA data pin
*)
GND for MIP with package NF.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 56
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
MIP Series

Physical Dimensions [mm]

MIP package F

MIP package NF

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 57
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
MIP Series

Recommended Accessories
PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV STCC-04 MTCC-01

Programmable “Smart” TEC Programmable “Smart” TEC Programmable “Smart” TEC

Standard TEC Controller Miniature TEC Controller
Controller – OEM Controler – Basic Controler – Advanced

MPPS-01 SMA-BNC SMA-SMA LEMO-DB9 LEMO-DUBOX2x5

Preamplifier Power Supply Signal Output Cable Signal Output Cable TEC and Supply Cable TEC and Supply Cable

LEMO-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER KK2-POWER USB: TypeA-MicroB

TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection

AC Adaptor Power Cable EU Power Cable UK Power Cable US EL-1

Power Supply Adaptor Power Cable Power Cable Power Cable Accessory Lens with Mount

DRB-1 DRB-2 MP PH STA-8x1-4

Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 58
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PIP Series PROGRAMMABLE ”SMART” PREAMPLIFIER

Features
• Compact size
• High signal-to-noise ratio
• Dedicated for operation with 2-, 3- and 4-stage TE cooled
or uncooled detectors
• Parameters settable by the user:
▪ output voltage offset
▪ gain (in 40 dB range)
▪ bandwidth:
150 kHz, 1.5 MHz, 20 MHz
1.5 MHz, 15 MHz, 200 MHz
▪ coupling AC/DC
▪ detector parameters (in some cases, with limitation)
• Programmable modules and programmable controllers
are interchangeable
• Highly flexible configuration allows the user to adapt
the module to variety of system parameters
• Additional accessories available

Applications
• Contactless temperature measurement
• Free space optical communication
• Laser radiation detection
• Gas analysis
• Fourier spectroscopy
• Fire, flame and human body detection
• Pyrometers, scanners
• Nondestructive material testing
Example Assembling
• OEM applications
(see: Recommended Accessories)

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 0.95 fo = 10 kHz2)
√Hz
pA 4.51) first stage transimpedance = 5 kΩ
Input Noise Current Density in
7.01) first stage transimpedance = 1 kΩ
√Hz
Low Cut-Off Frequency flo Hz DC/1k user configurable by software

150k/1.5M/20M3) maximum values, with limited range of detector

High Cut-Off Frequency fhi Hz
1.5M/15M/200M3) with „in circuit” filter activated

V 250 – 25k first stage transimpedace = 5 kΩ

Transimpedance Ki
A 1.25k – 125k first stage transimpedace = 1 kΩ
Output Impedance Rout Ω 50
Output Voltage Swing Vout V ±1 with 50 Ω load applied
max ±254) DC coupling set
Output Voltage Offset Voff mV
max ±10 AC coupling set
Power Supply Voltage Vsup V ±9
typ ±80
Power Supply Current Isup mA
max ±100
40×81.3×40 width×depth×height - with 2TE
Dimensions - mm×mm×mm 40×82.8×40 width×depth×height - with 3TE
40×84.3×40 width×depth×height - with 4TE
Operation Tempearture T °C +5...+35
Storage Temperature - °C -10...+50
Relative Humidity - % 10...90
Electrical characteristics @ Ta=20 °C.
1)
The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
Depending on preamplifier option.
4)
Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 59
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PIP Series

Description Operation
PIP is the programmable “smart” preamplifier. Due to the modern After turning on the controller, blinking LEDs, or splash screen
internal configuration, it offers extreme flexibility combined with are shown (depending on the version). The PTCC-01 controller probes
superior signal parameters and high reliability. Included voltage the version of IR module, and when PIP is found, the content of its
monitor allows user to check the working conditions (supply voltages, internal memory is downloaded, and following the data, proper working
detector bias voltage, first and last stage output voltage offset etc.) conditions are set: detector temperature, module supply voltage and
• User may also immediately change the gain, coupling (AC/DC), above mentioned preamplifier parameters. From the user point of
optimize the first stage transimpedance (in terms of input noise view: PTCC-01 informs of cooling down the detector indicated by
and overall bandwidth), reduce the bandwidth down to 1.5 MHz blinking green LOCK LED, and when the valid temperature is reached,
(for supressing wideband noise and convenient weak signal module supply is switched on and the IR detecting set is ready to
observation), and also manually or automatically supress the voltage operate.
offset. • The intelligent controller and intelligent module together constantly
• The optimized parameters are immediately stored into the internal probe the working conditions and, if any potential risk is recognized
EEPROM memory and automatically loaded after the power is on. (overloading the supply or TEC lines, overheating the module, opening
• Reset to the factory settings is always available, and following up the temperature stabilization loop etc.) the module is being shut
the manual, the operation and manipulation is both: easy and safe. down, and ERROR LED is on.
• In some cases, detector biasing condition may be adjusted, however, • For controlling the preamplifier parameters or performing a firmware
for detector safety this function is blocked in factory by default. update, please use the PC software. Parameters may be controlled
by using PTCC-01-ADV – no PC is then necessary.

WARNING! For proper operation, PIP preamplifier integrated with IR

detector should be connected to the PTCC-01 controller.

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
PIP-flo-fhi-P1-P2
Detector Type Description
P2 – mounting hole:
M4 – M4 mounting hole PC, PC-2TE, PC-3TE, PC-4TE photoconductive
M8 – M8x1 mounting hole
photoconductive,
PCI, PCI-2TE, PCI-3TE, PCI-4TE
P1 – package: optically immersed
F – with fan PV, PV-2TE, PV-3TE, PV-4TE photovoltaic
fhi – high cut-off frequency in Hz: photovoltaic,
20M, 200M PVI, PVI-2TE, PVI-3TE, PVI-4TE
optically immersed
flo – low cut-off frequency in Hz:
PVM, PVM-2TE, PVM-3TE, PVM-4TE
multiple heterojunction
DC/1k (user configurable by software) photovoltaic

PIP – preamplifier series multiple heterojunction

P – Programmable, I – Current Input, PVMI, PVMI-2TE, PVMI-3TE, PVMI-4TE photovoltaic,
P – Preamplifier optically immersed
Symbol -2TE, -3TE, -4TE means 2-, 3- or 4-stage TEC integrated with detector.
No TE mark informs that the detector is not TE cooled.

Schematic Diagram

Supply EMI LEMO

Thermistor1) Regulator Filters Supply & Control
Detector Connector
Biasing2) DATA
Microcontroller
CPU
IR Sensitive
Area Transimpedance Voltage SMA Output
Preamplifier Amplifier Connector

Detector Unit TE-Cooler1)

1)
, Only for TE-cooled detectors
2)
Only for biased detectors

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 60
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PIP Series

Power Supply and TEC Control Connector LEMO Connector Female

Pin Number Symbol Function
1 FAN+ FAN (+)
5
2 TH2 thermistor output (2) 4
6
3 TEC– TEC supply input (–)
4 –Vsup power supply input (–) 7 9 3

5 GND power ground

8 2
6 +Vsup power supply input (+) 1
7 TEC+ TEC supply input (+)
8 TH1 thermistor output (1)
9 DATA data pin

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 61
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PIP Series

Recommended Accessories
PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV SMA-BNC SMA-SMA

Programmable “Smart” TEC Programmable “Smart” TEC Programmable “Smart” TEC

Signal Output Cable Signal Output Cable
Controller – OEM Controller – Basic Controller – Advanced

LEMO-DB9 LEMO-DUBOX2x5 KK2-POWER USB: TypeA-MicroB AC Adaptor

TEC and Supply Cable TEC and Supply Cable Power Supply Cable Cable for PC Connection Power Supply Adaptor

DRB-1 DRB-2 MP PH STA-8x1-4

Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 62
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 SIP Series ULTRA SMALL PREAMPLIFIER

Features
• Very small size
• High signal-to-noise ratio
• Bandwidth up to 250 MHz
• Dedicated for opration with 2-, 3- and 4-stage TE cooled or uncooled
detectors
• Biased and non-biased detector compatible
• Adjustable gain (for bandwidth up to 100 MHz)
• Fully protected against exceeding supply voltage and reversing
power supply polarity
• Custom modifications upon request
• Additional accessories available

SIP package TO39 SIP package TO8

Description Applications
SIP is the ultra small transimpedance, AC or DC coupled preamplifier. • Contactless temperature measurement
It is dedicated for OEM applications and requires external heat sink (see • Free space optical communication
Recommended Accessories). • Laser radiation detection
SIP is designed for operation with either biased or non-biased and either • Gas analysis
cooled or uncooled detectors. • Fourier spectroscopy
• Fire, flame and human body detection
• Pyrometers, scanners
• Nondestructive material testing
• OEM applications

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 0.97 – 8.01) fo = 10 kHz2)
√ Hz
pA
Input Noise Current Density in 0.02 – 3.51) fo = 10 kHz2)
√ Hz
DC DC coupling set
Low Cut-Off Frequency flo Hz
10 to 10k AC coupling set
High Cut-Off Frequency fhi Hz 100k to 250M
V
Transimpedance Ki
A
up to 1×105

K i max
Transimpedance Range - up to 5 dependent on the high cut-off frequency
Ki min
Output Impedance Rout Ω 50
±10 fhi ≤ 1 MHz, RL = 1 MΩ3)
Output Voltage Swing Vout V
±1 1 MHz < fhi ≤ 250 MHz, RL = 50 Ω3)
Output Voltage Offset Voff mV max ±204)
±15 fhi ≤ 1 MHz
Power Supply Voltage Vsup V
±9 1 MHz < fhi ≤ 250 MHz
Power Supply Current Isup mA max ±50 no detector biasing
27×44.5×25 width×depth×height – SIP package TO39
Dimensions - mm×mm×mm
27×49.4×25 width×depth×height – with 2TE, 3TE, 4TE
Electrical characteristics @ Ta = 20 °C.
1)
The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
RL – load resistance
4)
Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 63
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
SIP Series

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
SIP-flo-fhi-P1-P2
Detector Type Description
P2 – gain adjustment:
G – with gain adjustment*) PC, PC-2TE, PC-3TE, PC-4TE photoconductive
NG – no gain adjustment
PCI, PCI-2TE, PCI-3TE, photoconductive, optically
P1 – package: PCI-4TE immersed
TO8 – for detectors with TO8 package PV, PV-2TE, PV-3TE, PV-4TE photovoltaic
TO39 – for detectors with TO39 package
f hi – high cut-off frequency in Hz:
PVI, PVI-2TE, PVI-3TE,
PVI-4TE
photovoltaic, optically immersed
100k, 300k,
1M, 5M, 10M, 20M, 50M, 100M, 250M PVM, PVM-2TE, PVM-3TE,
multiple heterojunction photovoltaic
PVM-4TE
f lo – low cut-off frequency in Hz:
PVMI, PVMI-2TE, PVMI-3TE, multiple heterojunction
DC, 10, 100, 1k, 10k
PVMI-4TE photovoltaic, optically immersed
SIP – preamplifier series Symbol -2TE, -3TE, -4TE means 2-, 3- or 4-stage TEC integrated with detector.
S – Version, I – Current Input,
P – Preamplifier

*)
Available only for fhi to 100M.

Schematic Diagram

AMP2x4
Detector Supply EMI
Supply & Control
Biasing2) Regulator Filters
Connector
Thermistor1) DATA
Configuration
Memory

IR Sensitive
Area Transimpedance Voltage MMCX Output
Preamplifier Amplifier Connector

Detector Unit TE-Cooler1)

1)
, Only for TE-cooled detectors
2)
Only for biased detectors

Power Supply and TEC Control Connector AMP2x4 Connector Male

Pin Number Symbol Function
1 –Vsup power supply input (–)
2*) TH2/N.C. thermistor output/not connected
3**) DATA/GND data pin/power ground 2 4 6 8
4*) TEC–/N.C. TEC supply input (–)/not connected
5 GND power ground 1 3 5 7
6*) TH1/N.C. thermistor output/not connected
7 +Vsup power supply input (+)

8*) TEC+/N.C. TEC supply input (+)/not connected

*)
N.C for SIP-flo-fhi-TO39.
**)
GND for SIP-flo-fhi-TO39.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 64
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
SIP Series

Physical Dimensions [mm]

SIP packageTO8

SIP package TO39

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 65
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
SIP Series

Recommended Accessories
PTCC-01-OEM PTTC-01-BAS PTCC-01-ADV STCC-04 MTCC-01

Programmable “Smart” TEC Programmable “Smart” TEC Programmable “Smart” TEC

Standard TEC Controller Miniature TEC Controller
Controller – OEM Controller – Basic Controller – Advanced

MPPS-01 PPS-02 PPS-03 MMCX-BNC MMCX-SMA

Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal Output Cable Signal Output Cable

AMP2x4-DB9 AMP2x4-DUBOX2x5 AMP2x4-AMP2x4 AMP2x4-MIC5 AMP1x6-MIC5

TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable

AMP1x6-POWER KK2-POWER USB: TypeA-MicroB AC Adaptor Power Cable EU

Power Supply Cable Power Supply Cable Cable for PC Connection Power Supply Adaptor Power Cable

Power Cable UK Power Cable US MHS-2

Power Cable Power Cable Additional Heat Sink

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 66
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 QIP Series FOUR CHANNEL PREAMPLIFIER

Features
• Very small size
• High signal-to-noise ratio
• Bandwidth up to 100 MHz
• Dedicated for operation with uncooled, quadrant geometry
detectors
• Fully protected against exceeding supply voltage and reversing
power supply polarity
• Custom configurations upon request
• Additional accessories available

Applications
• Laser beam positioning

Description
Example Assembling QIP is the four channel, transimpedance, AC or DC coupled
(see: Recommended Accessories) preamplifier. It is dedicated for BenchTop or OEM applications and,
in some cases, requires external heat sink (see Recommended
Accessories).
QIP is designed to work with either biased or non-biased, uncooled ,
quadrant geometry detectors.

Preamplifier Specification
Parameter Symbol Unit Typical Value Conditions, Remarks
nV
Input Noise Voltage Density en 0.97 – 8.01) fo = 10 kHz2)
√Hz
pA
Input Noise Current Density in 0.02 – 3.51) fo = 10 kHz2)
√Hz
DC DC coupling set
Low Cut-Off Frequency flo Hz
1k, 10k AC coupling set
High Cut-Off Frequency fhi Hz 100k to 100M
V
Transimpedance Ki
A
up to 2×105

Output Impedance Rout Ω 50

Output Voltage Swing Vout V ±1

Output Voltage Offset Voff mV max ±204)

Power Supply Voltage Vsup V ±9

Power Supply Current Isup mA max ±50 no detector biasing

Dimensions - mm×mm×mm 50×58.5×50 width×depth×height

Electrical characteristics @ Ta = 20 °C.
1)
The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.
2)
f0 – noise measurement frequency
3)
RL – load resistance
4)
Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 67
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
QIP Series

Preamplifier Code Description The preamplifier can be integrated with following

types IR detectors:
QIP-flo-fhi-P1
Detector Type Description
P1 – mounting hole: *)
M4 – M4 mounting hole PCQ quadrant photoconductive
M8 – M8x1 mounting hole PVMQ quadrant multiple heterojunction photovoltaic
fhi – high cut-off frequency in Hz: *)
Optical area 1x1mm and 2x2mm.
100k, 300k, 1M, 5M, 10M, 20M, 50M, 100M
flo – low cut-off frequency in Hz:
DC, 1k, 10k
QIP – preamplifier series
Q – Quadrant, I – Current Input,
P – Preamplifier

Schematic Diagram

Detector Supply EMI AMP2x4

Biasing*) Regulator Filters Supply Connector

IR Sensitive
Area Transimpedance Voltage Four MCX Output
Preamplifier Amplifier Connectors

Detector Unit
*)
Only for biased detectors

Power Supply Connector AMP2x4 Connector Male

Pin Number Symbol Function
1 –Vsup power supply input (–)
2 N.C. not connected
3 GND power ground 2 4 6 8
4 N.C. not connected
5 GND power ground 1 3 5 7
6 N.C not connected
7 +Vsup power supply input (+)

8 N.C. not connected

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 68
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
QIP Series

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 69
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
QIP Series

Recommended Accessories
MPPS-01 PPS-02 PPS-03 MCX-BNC MCX-SMA

Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal Output Cable Signal Output Cable

AMP2x4-MIC5 AMP2x4-DB9 AC Adaptor Power Cable EU Power Cable UK

Power Supply Cable Power Supply Cable Power Supply Adaptor Power Cable Power Cable

Power Cable US DRB-1 DRB-2 MP PH

Power Cable Base Mounting System Base Mounting System Mounting Post Post Holder

STA-8x1-4

Special Thread Adapter

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 70
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 STCC-04 Series STANDARD TEC CONTROLLER

Description
The STCC-04 is a standard thermoelectric cooler controller
with ±0.01 ºC stability.
The unit provides low noise power supply for integrated preamplifiers.

Features
• Provides proper detector cooling
• Preamplifier power supply included
• Temperature lock indicator

TEC Controller Specification

Value
Parameter Unit Conditions, Remarks
Min Typ Max
Temperature Stability K ±0.01 Tdet = 233 K (-40 °C)
25 Tdet = 233 K (-40 °C), ΔTdet = 0.1 °C
Detector Temperature Settling Time s 300 Tdet = 213K (-60 °C), ΔTdet = 0.1 °C
300 Tdet = 193 K (-80 °C), ΔTdet = 0.1 °C
2.5 STCC-04-P1-2-P3-P4
Maximum Voltage Across V 4.0 STCC-04-P1-3-P3-P4
TEC Element 7.7 STCC-04-P1-4-P3-P4
Ripple of Output Current % 0.5 ITEC = 1 A
Output Current STCC-04-09-P2-P3-P4
mA ±100
of the Built-In Power Supply STCC-04-15-P2-P3-P4
4.5 5.5 STCC-04-P1-2-P3-P4, STCC-04-P1-3-P3-P4
Power Supply Voltage Vsup V
11.5 12.5 STCC-04-P1-4-P3-P4
3A STCC-04-P1-2-P3-P4, STCC-04-P1-3-P3-P4
Power Supply Current Isup mA
1A STCC-04-P1-4-P3-P4
Series Resistance total resistance of the wires supplying
mΩ 1000
of the Connecting Cable TEC element
Dimensions mm×mm×mm 82×60.5×150 width×height×depth
0.25 STCC-04-00-P2-P3-P4
Weight kg
0.27 remaining models
Electrical characteristics @ Ta = 20 °C.

TEC Controller Code Description

STCC-04-P1-P2-P3-P4
P4 – temperature of IR detector:
P5 – 278 K, +5 °C
40 – 233 K, -40 °C
60 – 213 K, -60 °C
80 – 193 K, -80 °C
P3 – type of thermistor:
C – NCP03XM222E05RL (standard)
B – BR14KA132J-A (only for certain types of IR detectors)
A – TB04-222 (only for certain types of IR detectors)
P2 – type of TE cooler:
2 – two - stage
3 – three - stage
4 – four - stage
P1 – preamplifier power supply:
00 – no power supply
09 – power supply ±9 V
15 – power supply ±15 V
G1 – combined power supply (+12 V, -5 V) for FIP preamplifier
STCC-04 – cooler controller series
S – Standard, T – Thermoelectric, C – Cooler, C – Controller, ver 04

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 71
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
STCC-04 Series

Physical Dimensions [mm]

Power Supply and Control Connector DB9 Connector Female

Pin Number Symbol Function

1 TEC+ TEC supply output (+)
2 TEC– TEC supply output (–)
3 GND power ground
5 4 3 2 1
4 TH1 thermistor input (1)
5 TH2 thermistor input (2)
9 8 7 6
6 –Vsup power supply output (–)
7 FAN+/GND FAN (+)/power ground
8 N.C. not connected
9 +Vsup power supply output (+)

Recommended Accessories
AC Adaptor LEMO-DB9 AMP2x4-DB9 DB9-DB9

Power Supply Adaptor TEC and Supply Cable TEC and Supply Cable Supply Cable

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 72
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 MTCC-01 Series MINIATURE TEC CONTROLLER

Description
The MTCC-01 miniature TEC controller is designed to control
temperature of 2- or 3-stage TE cooled IR detectors. MTCC-01 can be
used with the Integrated Detector/Preamplifier Module BIP, MIP, SIP
and FIP series. The target temperature is factory adjusted in range of
205 to 255K.
Features Applications
• Compact size • Temperature control of TE
• Low cost cooled IR detectors
• Easy to use • OEM applications
• High stability
• Low power consumption
• Low noise, due to the linear
regulation based on output stage

WARNING! The TEC controller is paired in the factory with the detector delivered in the IR set. Swapping controllers may cause malfunction or
damage of TEC and detector.

TEC Controller Specification

Parameter Unit Typical Value Conditions, Remarks
Temperature Stability K ±0.01
Settling Time of the Set Detector 60 MTCC-01-2TE, Tdet = 233 K (-40 °C)
s
Temperature 90 MTCC-01-3TE, Tdet = 213 K (-60 °C)
2.6 to 5.5 MTCC-01-2TE
Power Supply Voltage Vsup V
4.0 to 5.5 MTCC-01-3TE
1.1 MTCC-01-2TE
Maximum TEC Output Current ITEC A
0.43 MTCC-01-3TE
Maximum TEC Output Voltage VTEC V 3.6
Dimensions mm×mm×mm 70×45×19 width×height×depth
Weight g 35
Electrical characteristics @ Ta = 20 °C.

TEC Controller Code Description

MTCC-01-P1
P1 – number of TE cooler stages:
2TE – two - stage
3TE – three - stage
MTCC-01 – cooler controller series:
M - Miniature, T - Thermoelectric, C - Cooler, C - Controller, ver 01

Example Wiring Diagram

AMP1x6-MIC5
Cable
100..240VAC
MPPS-01 50..60Hz
AMP2x4-AMP2x4 MTCC-01 TEC Controller Linear Power
Cable Supply
BIP, MIP, SIP, FIP J1
Integrated Preamplifier
J2

SMA-BNC
Cable
To Oscilloscope

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 73
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
MTCC-01 Series

Physical Dimensions [mm]

Power Supply and Control Connectors

AMP1x6 Connector Male (J1) AMP2x4 Connector Male (J2)

2 4 6 8

1 2 3 4 5 6 1 3 5 7

Pin Number Symbol Function Pin Number Symbol Function

1 TECC+ TEC controller supply input (+) 1 –Vsup power supply output (–)
1)
2 TECC GND 1)
TEC controller power ground 2 TH2 thermistor input (2)
3 +Vsup 2), 3)
power supply input (+) 3 FAN+/N.C. fan supply/not connected
4 GND1), 3) power ground 4 TEC– TEC supply output (–)
5 FAN+/N.C. FAN(+)/not connected 5 GND power ground
1)
6 –Vsup 2), 3)
power supply input (–) 6 TH1 thermistor input (1)
1) TECC GND and GND should be connected together in power adapter. 7 +Vsup power supply output (+)
2) See preamplifier specification for details.
3) Only for preamplifier module supply, not required for proper controller
8 TEC+ TEC supply output (+)
operation. 1) Thermistor polarity without significance.
For more details about TE cooling see Infrared Detectors Data
Sheets.

WARNING! Do not connect TEC– or TEC+ to any other supply or

to GND!

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 74
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
MTCC-01 Series

Recommended Accessories
MPPS-01 LEMO-AMP2x4 AMP2x4-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER

Preamplifier Power Supply TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable

Power Cable EU Power Cable UK Power Cable US

Power Cable Power Cable Power Cable

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 75
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PTCC-01 PROGRAMMABLE ”SMART” TEC CONTROLLER

PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV

Description
PTCC-01 is the programmable, precision, low noise, thermoelectric cooler controller series, designed to operate with VIGO IR detection modules.
It is compatible with both classic (BIP, MIP, SIP, FIP) and new, programmable PIP preamplifiers, integrated with IR detectors. Available options:
PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV
• TEC controller and preamplifier power supply • TEC controller and preamplifier power supply • TEC controller and preamplifier power supply
without housing encapsulated in a small size enclosure encapsulated in a small size enclosure
• Configurable by PC software available on web • Configurable by PC software available on web • Configurable by build-in function keys or PC
page page software available on web page
• Status LED indicator and status/data • Status LED indicator • Status LCD indicator
connector

Features
• Low cost • Modern architecture with digitally performed PID temperature control
• Easy to use • Current / voltage / temperature monitor available with PC program
• Very small size • Overcurrent, overvoltage and overheating protection
• Low power consumption • Split grounds and filtering for EMC improvement
• High stability and precision • Firmware upgrade option available
• Dedicated for opeartion with preamplifiers integrated with with 2-, 3-, • Provides proper detector cooling
and 4-stage TE cooled detectors • Preamplifier supply included
• Compatible with every variant of programmable preamplifier PIP;
user can swap the modules and controllers

TEC Controller Specification

Value
Parameter Unit Conditions, Remarks
Min Typ Max
Temperature Stability K ±0.01 Tdet = 233 K (-40 °C)
Temperature Readout Stability mK 1 Tdet = 213 K (-60 °C)
25 Tdet = 233 K (-40 °C), ΔTdet = 0.1 K
Detector Temperature Settling Time s 45 Tdet = 213 K (-60 °C), ΔTdet = 0.1 K
60 Tdet = 193 K (-80 °C), ΔTdet = 0.1 K
1.2 2TE
Maximum TEC Current A 0.45 3TE
0.45 4TE
Output Voltage Range V 3 14.5
Output Current of The Built-In
mA ±200 output voltage: 3…14.5 V
Power Supply
Power Supply Voltage Vsup V 9 16 wider range available on demand
Power Supply Current Isup mA 500 ITEC = 0.45 A, UTEC = 7.5 V
Series Resistance total resistance of the wires supplying TEC
mΩ 1000
of the Connecting Cable element
51×17.3×93 width×height×depth - PTCC-01-OEM
Dimensions mm×mm×mm 55×24.2×111.8 width×height×depth - PTCC-01-BAS
68.9×30.4×107.8 width×height×depth - PTCC-01-ADV
51 PTCC-01-OEM
Weight g 155 PTCC-01-BAS
190 PTCC-01-ADV
Storage Temperature °C -20 +70
Ambient Temperature °C +5 +45
10 90 from +5 °C to +35 °C
Relative Humidity %
10 50 > +35 °C
Electrical characteristics @ Ta = 20 °C.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 76
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PTCC-01 Series

Physical Dimensions [mm]

PTCC-01-OEM

PTCC-01-BAS

PTCC-01-ADV

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 77
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PTCC-01 Series

Power Supply and Control Connector (PTCC-01-BAS and PTCC-01-ADV)

Pin Number Symbol Function
1 TEC+ TEC supply output (+)
2 TEC– TEC supply output (–)
DB9 Connector Female
3 GND power ground
4 TH1 thermistor input (1)
5 TH2 thermistor input (2)
5 4 3 2 1
6 –Vsup power supply output (–)

7 +5V
FAN and programmable preamp 9 8 7 6
internal logic auxiliary supply
8 DATA bidirectional data port
9 +Vsup power supply output (+)
metal cover GND-SH shield

Power Supply and Control Connectors (PTCC-01-OEM)

Pin Number Symbol Function KK2 Connector Male
1 TECC+ TEC controller supply input (+)
2 TECC GND TEC controller power ground
1 2

Pin Number Symbol Function

1 TEC+ TEC supply output (+)
2 TEC– TEC supply output (–) DUBOX2x5 Connector Male
3 GND power ground
4 TH1 thermistor input (1)
5 TH2 thermistor input (2)
5 4 3 2 1
6 –Vsup tower supply output (–)
FAN and PIP preamp internal
7 +5V
logic auxiliary supply 10 9 8 7 6
8 DATA bidirectional data port
9 +Vsup power supply output (+)
10 GND-SH shield

Status / DATA Connector (PTCC-01-OEM)

Pin Number Symbol Function
1 ERR – LED error indicator
temperature control loop lock
2 LOCK – LED
indicator
3 SUP – LED module power supply on indicator 7 6 5 4 3 2 1
4 3.3 V auxiliary supply
5 TXD transmitted data (RS-232)
6 GND common (signal) ground (RS-232)
7 RXD received data (RS-232)

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 78
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PTCC-01 Series

Recommended Accessories
AMP2x4-DB9 AMP2x4-DUBOX2x5 LEMO-DB9 LEMO-DUBOX2x5 KK2-POWER

TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable

USB: TypeA-MicroB AC Adaptor

Cable for PC Connection Power Supply Adaptor

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 79
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PPS-02 Series PREAMPLIFIER POWER SUPPLY

Description
The PPS-02 preamplifier power supply is designed for
supplying VIGO System IR Detection Modules included
uncooled IR detectors.
Features
• Dedicated for supplying uncooled detectors
• Compact size
• Easy to use
• Low cost

Preamplifier Power Supply Specification

Parameter Unit Value Conditions, Remarks
Power Supply Voltage Vsup V AC 100 to 240 50 to 60 Hz
±15
Output Voltage V DC ±9
+12, -5
Output Current mA ±100
Dimensions mm×mm×mm 82×60.5×150 width×height×depth
Weight kg 0.25
Electrical characteristics @ Ta = 20 °C.

Preamplifier Power Supply Code Description

PPS-02-P1
P1 – power supply:
09 – power supply ±9 V
15 – power supply ±15 V
G1 – combined power supply (+12 V, -5 V) for FIP preamplifier
PPS-02 – preamplifier power supply series
P – Preamplifier, P – Power, S – Supply, ver 02

Power Supply Connector

Pin Number Symbol Function
1 N.C. not connected DB9 Connector Female
2 N.C. not connected
3 GND power ground
4 N.C. not connected 5 4 3 2 1
5 N.C. not connected
6 –Vsup power supply output (–)
9 8 7 6
7 N.C. not connected
8 N.C. not connected
9 +Vsup power supply output (+)

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 80
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PPS-02 Series

Physical Dimensions [mm]

Recommended Accessories
AC Adaptor LEMO-DB9 AMP2x4-DB9 DB9-DB9

Power Supply Adaptor Supply Cable Supply Cable Supply Cable

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 81
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PPS-03 Series PREAMPLIFIER POWER SUPPLY

Description
The PPS-03 preamplifier power supply is designed for
supplying VIGO System IR Detection Modules included
uncooled IR detectors.
Features
• Dedicated for supplying uncooled detectors
• Very small size
• Low cost

Preamplifier Power Supply Specification

Parameter Unit Value Conditions, Remarks
Power Supply Voltage Vsup V AC 100 to 240 50 to 60 Hz
±15
Output Voltage V DC ±9
+12, -5
Output Current mA ±100
Dimensions mm×mm×mm 55×24.2×54 width×height×depth
Weight g 100
Electrical characteristics @ Ta = 20 °C.

Preamplifier Power Supply Code Description

PPS-03-P1
P1 – power supply:
09 – power supply ±9 V
15 – power supply ±15 V
G1 – combined power supply (+12 V, -5 V) for FIP preamplifier
PPS-03 – preamplifier power supply series
P – Preamplifier, P – Power, S – Supply, ver 03

Power Supply Connector

Pin Number Symbol Function
1 N.C. not connected DB9 Connector Female
2 N.C. not connected
3 GND power ground
4 N.C. not connected 5 4 3 2 1
5 N.C. not connected
6 –Vsup power supply output (–)
9 8 7 6
7 N.C. not connected
8 N.C. not connected
9 +Vsup power supply output (+)

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 82
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
PPS-03 Series

Physical Dimensions [mm]

Recommended Accessories
AC Adaptor LEMO-DB9 AMP2x4-DB9 DB9-DB9

Power Supply Adaptor Supply Cable Supply Cable Supply Cable

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 83
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 MPPS-01 Series PREAMPLIFIER LINEAR POWER SUPPLY

Description
The MPPS-01 preamplifier linear power supply is
designed for supplying VIGO System IR Detection
Modules included uncooled and cooled (operate with
MTCC-01 controllers) IR detectors.
Features
• Provides low noise preamplifier linear power supply
• Dedicated for supplying uncooled and cooled IR
detectors
• Easy to use

Preamplifier Power Supply Specification

Parameter Unit Value Conditions, Remarks
Power Supply Voltage Vsup V AC (100 ÷ 127) to (200 ÷ 240) 50 to 60 Hz
±15
Output Voltage V DC ±9
+12, -5
Output Current mA ±500
Dimensions mm×mm×mm 109×65×175 width×height×depth
Weight kg 1.3
Electrical characteristics @ Ta = 20 °C.

Preamplifier Power Supply Code Description

MPPS-01-P1
P1 – power supply:
09 – power supply ±9 V
15 – power supply ±15 V
G1 – combined power supply (+12 V, -5 V) for FIP preamplifier
MPPS-01 – preamplifier power supply series
M – Version, P – Preamplifier, P - Power, S - Supply, ver 01

Power Supply Connector MIC5 Connector Female

Pin Number Symbol Function
1 TEC– TEC supply output (–) 3
2 +Vsup power supply output (+)
2 4
3 GND power ground
4 –Vsup power supply output (–) 1 5
5 TEC+ TEC supply output (+)

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 84
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
MPPS-01 Series

Physical Dimensions [mm]

Recommended Accessories
AMP2x4-MIC5 LEMO-MIC5 AMP1x6-MIC5 Power Cable EU Power Cable UK

Power Supply Cable Power Supply Cable Power Supply Cable Power Cable Power Cable

Power Cable US

Power Cable

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 85
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 CABLES

BNC-BNC SMA-BNC SMA-SMA MMCX-BNC MMCX-SMA

Signal Input or Output Cable Signal Output Cable Signal Output Cable Signal Output Cable Signal Output Cable

MCX-BNC MCX-SMA AMP2x4-DB9 AMP2x4-DUBOX2x5 AMP2x4-AMP2x4

Signal Output Cable Signal Output Cable TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable

LEMO-DB9 LEMO-DUBOX2x5 LEMO-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER

TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable

DB9-DB9 DB9-4mmPLUGS DB9-MIC5 AMP2x4-MIC5 LEMO-MIC5

Power Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable

KK2-POWER USB: TypeA-MicroB Power Cable EU Power Cable UK Power Cable US

Power Supply Cable Cable for PC Connection Power Cable Power Cable Power Cable

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 86
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 AC ADAPTORS

AC Adaptor

Power Supply Adaptor

MECHANICAL ACCESSORIES

DRB-1 DRB-2 MP PH STA-8x1-4

Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter

MHS-1 MHS-2 MHS-3 DH-BNC-1 DH-BNC-2

AVAILABLE AVAILABLE
SOON SOON

Additional Heat Sink Additional Heat Sink Additional Heat Sink Detector's Holder Detector's Holder

EL-1

Accessory Lens with Mount

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 87
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 DRB-1 BASE MOUNTING SYSTEM

Description
DRB-1 is a stable base mountig system dedicated for
Bench-Top IR Detection Modules and IR detectors in BNC
packages.

Features
• Stable construction
• Adjustable height
• Durable, chrome plated elements

Specification
Parameter Value
Weight [g] 1390
Usable Height [mm] 108..178
Base Plate Diameter [mm] 120
Mounting Post Weight [g] 126
Thread M8x1 or 1/4-20 UNC

Physical Dimensions [mm]

… ...

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 88
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 DRB-2 BASE MOUNTING SYSTEM

Description
DRB-2 is a stable base mountig system dedicated for
Bench-Top IR Detection Modules and IR detectors in BNC
packages.
Standard DRB-2 consists of:
• Base Plate BP
• Mounting Post MP-100
• Post Holder PH-100

IMPORTANT NOTE! If you require another dimensions of

MP or PH, please make remark in your formal purchase
order.

Features
• Stable construction
• Adjustable height
Example Assembling • Durable elements
• Compatible with M6 optical breadboards

Special Thread Adapter M8x1-M4

STA-8x1-4 (optional)

Mounting Post
MP

Wing Knob M4
WK-4

Thread Adapter M4-M6 Post Holder

TA-4-6 PH

Base Plate
BP

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 89
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 MP MOUNTING POST

Description
MP is a mounting post made of stainless steel.
It is equipped with two thread adapters TA-4-6
as a standard.
MP-50, MP-75 and MP-100 models are available.

Example Assembling

Specification
Model Weight [g] Dimension A [mm]
MP-50 55 50
MP-75 85 75
MP-100 115 100

Physical Dimensions [mm]

Mounting Post Thread Adapter M4-M6 (TA-4-6)

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 90
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 PH POST HOLDER

Description
PH is a post holder made of black anodized
aluminium. It is equipped with wink knob WK-4
as a standard.
PH-50, PH-75 and PH-100 models are available.

Example Assembling

Specification
Model Weight [g] Dimension A [mm]
PH-50 35 50
PH-75 50 75
PH-100 60 100

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 91
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 BP BASE PLATE

Description
BP is a base plate made of black, lacquered steel. It provides
mechanical stable conditions for mounting system.
Weight: 1756g

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 92
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 STA-8x1-4 SPECIAL THREAD ADAPTER

Description
STA-8x1-4 is a special thread adapter M8x1 to M4, made of stainless
steel. It allows to install Detection Modules with M8x1 mounting hole
and Detector's Holder DH-BNC-1 on Base Mounting System DRB-2.
Weight: 6g

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 93
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 WARRANTY
VIGO System S.A. hereby represents and warrants all Products manufactured by VIGO and sold hereunder to be free from defects in workmanship
or material during a period of twelve (12) months from the date of delivery save for products for which a special warranty is given. If any Product
proves however to be defective in workmanship or material within the period herein provided VIGO System undertakes to the exclusion of any other
remedy to repair or at its own option replace the defective Product or part thereof free of charge and otherwise on the same conditions as for the
original Product or part without extension to original warranty time. Defective parts replaced in accordance with this clause shall be placed
at the disposal of VIGO.

VIGO also warrants the quality of all repair and service works performed by its employees to products sold by it. In case the repair or service works
should appear inadequate or faulty and should this cause malfunction or nonfunctioning of the product to which the service was performed VIGO
shall at its free option either repair or have repaired or replace the product in question. The working hours used by employees of VIGO for such
repair or replacement shall be free of charge to the client. This service warranty shall be valid for a period of six (6) months from the date the service
measures were completed.

This warranty is however subject to following conditions:

• a substantiated written claim as to any alleged defects shall have been received by VIGO System within thirty (30) days after the defect or
fault became known or occurred,
and
• the allegedly defective Product or part shall, should VIGO so require, be sent to the works of VIGO or to such other place as VIGO may
indicate in writing, freight and insurance prepaid, properly packed and labeled.

This warranty does not however apply when the defect has been caused through
1. normal wear and tear or accident;
2. misuse or other unsuitable or unauthorized use of the Product or negligence or error in storing, maintaining or in handling the Product or
any equipment thereof;
3. wrong installation, assembly or failure to service the Product or otherwise follow VIGO's service instructions including any repairs or
installation or assembly or service made by unauthorized personnel not approved by VIGO or replacements with parts not manufactured
or supplied by VIGO;
4. modifications or changes of the Product as well as any adding to it without VIGO's prior authorization;
5. burned active element by irradiation above damage thresholds;
6. electrostatic discharges;
7. improper detector bias;
8. improper TE cooler bias (TE cooler damage or active element overheating);
9. other factors dependent on the Customer or a third party.
Notwithstanding the aforesaid VIGO System liability under this clause shall not apply to any defects arising out of materials, designs or instructions
provided by the Customer.

This warranty is expressly in lieu of and excludes all other conditions, warranties and liabilities, expressed or implied, whether under law, statute or
otherwise, including without limitation any implied warranties of merchantability or fitness for a particular purpose and all other obligations and
liabilities of VIGO or its representatives with respect to any defect or deficiency applicable to or resulting directly or indirectly from the Products
supplied hereunder, which obligations and liabilities are hereby expressly canceled and waived. VIGO's liability shall under no circumstances exceed
the invoice price of any Product for which a warranty claim is made, nor shall VIGO in any circumstances be liable for lost profits or other
consequential loss whether direct or indirect or for special damage.

RMA Request Instructions:

• No Product may be returned without first contacting VIGO for a Return Material Authorization ('RMA') number.
• Please obtain a RMA number from VIGO Support Team before returning any item. When requesting a RMA number, please state your
order number, the product you wish to return and the reason for return. We will only accept returns which have an RMA number.
Authorized returns are to be shipped according to received instruction from VIGO in appropriate shipping box. An unauthorized return, i.e.
one for which an RMA number has not been issued and authorized returns however, shipped with incorrect customs documents - will not
be accepted.
• Please print the RMA number clearly on the return label to avoid any delay in processing. Please send package to:

VIGO System S.A.

Sales Office, Building B
129/133 Poznanska St.
05-850 Ozarow Mazowiecki
POLAND

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 94
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 CONTACT AND DISTRIBUTORS

Find Our Products in Your Country

To find our representative in your local area, please check the table below. If you do not find a Distributor listed in your country, please contact us
directly:

VIGO System S.A.

129/133 Poznanska Str.
05-850 Ozarow Mazowiecki
POLAND
tel.: +48 22 733 54 06
fax: +48 22 733 54 26
email: info@[Link]
[Link]

CHINA CHINA FRANCE

BIT Photoelectronic Co., Ltd Uniqueray Technologies Limited ACAL BFI FRANCE
tel.: +86 10 6891 3630 tel.: +86 755 2333 9831 tel.: +33 (0) 1 60 79 59 30
fax: +86 10 6847 0197 fax: +86 755 2333 9831 fax: +33 (0) 1 60 79 89 01
mobile: +86 180 3808 5221
email: sales@[Link] email: sales@[Link] email: [Link]@[Link]
[Link] [Link] [Link]

GERMANY ISRAEL ITALY

DoroTEK GmbH Bi-Pol Massimo Bonfante
tel.: + 49(0)3341 21 54 27 tel.: +972 525 877 759 tel.: +39 02 36 52 46 30
fax: 49(0)3341 21 54 29 fax: +39 02 99 98 12 25
mobile: +39 335 82 22 917
email: info@[Link] email: evyatar@[Link] email: info@[Link]
[Link] [Link] [Link]

JAPAN JAPAN MEXICO & COLOMBIA

FIT Leadintex, Inc. IR System Co., Ltd. Mexitek, S.A.
tel.: +81 3 3666 7100 tel.: +81 42 400 0373 tel.: +52 55 5575 0312
fax: +81 3 3666 7007 fax: +81 42 400 0374

email: sales@[Link] email: office@[Link] email: sales@[Link]

[Link] [Link]

NETHERLANDS UNITED KINGDOM USA & CANADA

Jonat Automation B.V. Photonic Solutions, LTd Boston Electronics Corporation
tel.: +31 (0)13 571 16 26 tel: +44 (0)131 664 8122 tel.: (617) 566 3821
fax: +31 (0)13 571 55 88 fax: +44 (0)131 449 7301 fax: (617) 731 0935
mobile: +31 (0)6 24 802 956
email: info@[Link] email: sales@[Link] email: vigo@[Link]
[Link] [Link] [Link]

Would You Like To Be Our Distributor?

In order to increase our presence in the global market, we are looking for prospective partners for distribution of our products. For more information,
please contact us.

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 95
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 Appendix

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: info@[Link] 96
Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO
 Two-stage thermoelectric cooler - 2TE
Lens shape Hyperhemisphere Hemisphere Flat
Detector optical area [mm²] 0.5x0.5 1x1 2x2 3x3 0.5x0.5 - 3x3 0.01x0.01 - 4x4
R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity
A [mm] 4.1±0.3 3.2±0.3 1.85±0.3 0.8±0.3 5.6±0.3 5.6±0.3
B [mm] 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3
C [mm] 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3
10.16
FOV ~36° ~36° ~36° ~36° ~70° ~70°
5.08
Three-stage thermoelectric cooler - 3TE
Lens shape Hyperhemisphere Hemisphere Flat
Detector optical area [mm²] 0.5x0.5 1x1 2x2 3x3 0.5x0.5 - 3x3 0.01x0.01 - 4x4
6 7 8 9
R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity
5 10
10.16
5.08

A [mm] 5.7±0.35 4.8±0.35 3.45±0.35 2.4±0.35 7.2±0.35 7.2±0.35

11
4 B [mm] 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35
3 2 1 12
0 .8 C [mm] 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3
0.8

FOV ~36° ~36° ~36° ~36° ~70° ~70°

45°
Four-stage thermoelectric cooler - 4TE
Lens shape Hyperhemisphere Hemisphere Flat
Detector optical area [mm²] 0.5x0.5 1x1 2x2 3x3 0.5x0.5 - 3x3 0.01x0.01 - 4x4
R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity
FOV A [mm] 7.3±0.4 6.4±0.4 5±0.4 4±0.4 8.8±0.4 8.8±0.4
B [mm] 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4
O 15.2 ±0.2 5 C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3
4 O 6
6 FOV ~36° ~36° ~36° ~36° ~70° ~70°
F

3 Pin out A - Distance from the bottom of the TO8 package

7 Signal 1 and 3 to the focal plane
Thermistor 7 and 9
TE Cooler Supply 2(+) and 8(-)
C

Chassis Ground 11
2 not used 4, 5, 6, 10, 12
B
A
6.4 ±0.4
7.8 ±0.3

O 0.45 8
4-40 UNC

8 4-40 UNC A2 screw

7 Thermo-electic cooler
6 Detector on sapphire pad HgCdTe / GaAs / Sapphire
5 Window Al2O3 / ZnSe / other
4 Detector cap Stainless steel
3 Absorber container Stainlesl steel
2 Detector case Stainless steel
1 TO8 housing Gold plated Kovar
No. Name Material
UNIT: mm Date:
The drawings and the information provided with the drawings are the sole GENERAL TOLERANCE: 18-Jul-16 Production Department
property of VIGO System S.A. Any disclosure or reproduction, in part or whole,
without the written permission of VIGO System S.A. is prohibited. SCALE: 2:1 DWG NO: SHEET 1 OF 1
X.X=±0.1 / [Link]=±0.05 DT-TO8-XTE.003
VIGO System's detectors contains miniature amounts of mercury and cadmium but
as part of medical devices, monitoring and control instruments can be treated as SIZE TITLE: WEIGHT:
an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). A4 Detector TO8 - XTE 7u1 g
 45°

0.9 0.8
O 5.08

3 1

FOV
O 9.2
O 8.4
O 5.5 3
2

R
4.7
0.4
A
B

Lens shape Hyperhemisphere Hemisphere Flat

1 Detector optical area [mm²] 0.5x0.5 1x1 2x2 3x3 0.5x0.5 - 3x3 0.01x0.01 - 4x4
R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity
A [mm] 1.5±0.2 2.4±0.2 3.75±0.2 4.8±0.2 0 0
B [mm] 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2
FOV ~36° ~36° ~36° ~36° ~90° ~90°
13.5

Pin out
Signal 1(+) and 2(-)
Chassis Ground 3

O 0.45

3 Detector on sapphire pad HgCdTe / GaAs / Sapphire

2 Detector cap Brass
1 TO39 housing Gold plated Kovar
No. Name Material
UNIT: mm Date:
The drawings and the information provided with the drawings are the sole GENERAL TOLERANCE: 18-Jul-16 Production Deparment
property of VIGO System S.A. Any disclosure or reproduction, in part or whole,
without the written permission of VIGO System S.A. is prohibited. SCALE: 2:1 DWG NO: SHEET 1 OF 1
X.X=±0.1 / [Link]=±0.05 DT-TO39.003
VIGO System's detectors contains miniature amounts of mercury and cadmium but
as part of medical devices, monitoring and control instruments can be treated as SIZE TITLE: WEIGHT:
an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). A4 Detector TO39 3 pin 3u1 g
 FOV
3 O 13
C 4

R
A
B

27.7 ±0.2

2 40 ±1
10.5 ±1

Lens shape Hyperhemisphere Hemisphere Flat

Detector optical area [mm²] 0.5x0.5 1x1 2x2 3x3 0.5x0.5 - 3x3 0.01x0.01 - 4x4
R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity
A [mm] 4.6±0.3 5.5±0.3 6.85±0.3 7.9±0.3 3.1±0.3 1.6±0.3
B [mm] 3.1±0.15 3.1±0.15 3.1±0.15 3.1±0.15 3.1±0.15 1.6±0.15
FOV, C=Ø4 [mm] ~36° ~36° ~36° ~36° ~66° ~102°
FOV, C=Ø6 [mm] ~36° ~36° ~36° ~36° ~88° ~124°

4 Detector on sapphire pad HgCdTe / GaAs / Sapphire

3 Detector cap Copper covered with Cr-Ni
2 Detector case Copper covered with Cr-Ni
1 BNC connector - may vary from shown in drawing
No. Name Material
UNIT: mm Date:
The drawings and the information provided with the drawings are the sole GENERAL TOLERANCE: 18-Jul-16 Production Deparment
property of VIGO System S.A. Any disclosure or reproduction, in part or whole,
without the written permission of VIGO System S.A. is prohibited. SCALE: 2:1 DWG NO: SHEET 1 OF 1
X.X=±0.1 / [Link]=±0.05 DT-BNC.004
VIGO System's detectors contains miniature amounts of mercury and cadmium but
as part of medical devices, monitoring and control instruments can be treated as SIZE TITLE: WEIGHT:
an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). A4 Detector BNC 25 u1 g
 3
O 24 5
2
O 5 4
6.9 ±0.2

6.4
12.8 ±0.2
22.8 ±0.2

6
8

1 O 10
O 13

21.9 ±0.3

Photonic Solutions Ltd

Unit 2.2 Quantum Court
6 SMA connector Gold coated brass / PTFE
Heriot-Watt University Research Park 5 Detector on sapphire pad HgCdTe / GaAs / Sapphire
Edinburgh EH14 4AP 4 Window ZnSe / other
Tel: 0131 664 8122 3 Detector cap Black anodized Al
Fax: 0131 449 7301 2 Detector housing Black anodized Steel
1 PEM handle Black anodized Al
Email: sales@[Link]
No. Name Material
Web: [Link] Date:
UNIT: mm
The drawings and the information provided with the drawings are the sole GENERAL TOLERANCE: 18-Jul-16 Production Department
property of VIGO System S.A. Any disclosure or reproduction, in part or whole,
without the written permission of VIGO System S.A. is prohibited. SCALE: 2:1 DWG NO: SHEET 1 OF 1
X.X=±0.1 / [Link]=±0.05 DT-PEM.006
VIGO System's detectors contains miniature amounts of mercury and cadmium but
as part of medical devices, monitoring and control instruments can be treated as SIZE TITLE: WEIGHT:
an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). A4 Detector PEM 25u1 g