SPECIAL REPORTS
Challenges and Innovations in Advanced Lithography Technology
MORI Ichiro HIGASHIKI Tatsuhiko
Large-scale integration of semiconductor devices offers such advantages as higher performance, enhanced functions, and greater
reliability as well as reduced production cost. To achieve large-scale integration on a practical basis, there is a strong need for progress
in ultrafine processing technology, which forms the critical circuit patterns. A lithography system to fabricate microcircuit patterns of
semiconductors incorporates a number of key technologies; namely, mask making, optical proximity correction (OPC), exposure tools,
resist technology, and metrology.
To promote semiconductor miniaturization, Toshiba is developing a lithography designing technique that realizes optimally effective
lithography by integrating all related engineering technologies.
8
nm 250 180 130 90 70 55 40
nm 250 180 130 90 70 55 40
KrF ArF ArF
248 nm 193 nm
NA 0.6 0.68 0.73 0.75 0.85 1.0 1.25
10%
k1 0.6 0.49 0.38 0.35 0.31 0.29 0.26
100 72 52 47 36 28 23
No
Yes
9
90
2 1 1
Cr
15
13
10
10 9.0
8.0 7.5 7.0 1
0 1
5
180 130 90 70 55 40
nm
20 10 6.7 5.3 4.0 3.0
nm
10
nm 130 90 65 45
k1 0.50 0.40 0.35 0.30
OPC
OPC
OPC
11
A
B
C
D
A A A A A A MORI Ichiro
D A B D A B
B A D B A D
A B C D A A A A A A
D A B D A B
CP B A D B A D
HIGASHIKI Tatsuhiko, [Link].
12
